Growth behaviour of bulk GaN single crystals grown with various flux ratios using solvent-thermal method

Crystal Research and Technology

Volumn 40, Issue 9, 2005, Pages 827-831

  Shin, T I ^a   Yoon, D H ^a  

^a Sungkyunkwan University   (South Korea)

Author keywords

Charaterization; Crystal growth behavior; GaN crystals; Solvent thermal method

Indexed keywords

CHARACTERIZATION; CRYSTAL GROWTH; GALLIUM NITRIDE; NUCLEATION; SOLVENTS; X RAY DIFFRACTION ANALYSIS;

CRYSTAL GROWTH BEHAVIOR; FLUX RATIO; GAN CRYSTALS; SOLVENT-THERMAL METHOD;

SINGLE CRYSTALS;

EID: 26044469364     PISSN: 02321300     EISSN: None     Source Type: Journal    
DOI: 10.1002/crat.200410441     Document Type: Article

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