SCOPUS 정보 검색 플랫폼

Volumn 289, Issue 1, 2006, Pages 140-144

Crystal growth and characterization of thick GaN layers grown by oxide vapor transport technique

Author keywords

A1. X ray topography; A2. Growth from vapor; B1. Gallium compounds; B1. Nitrides; B2. Semiconducting gallium compounds

Indexed keywords

AMMONIA; GALLIUM NITRIDE; GRAPHITE; NITROGEN COMPOUNDS; OXIDES; SCANNING ELECTRON MICROSCOPY; VAPORS; X RAY DIFFRACTION ANALYSIS;

GRAPHITE POWDER; GROWTH FROM VAPOR; NITROGEN CARRIER GAS; X-RAY TOPOGRAPHY;

CRYSTAL GROWTH;

EID: 33244465370 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/j.jcrysgro.2005.11.005 Document Type: Article

Times cited : (18)

References (24)

1
- 0028385147
- S. Nakamura, T. Mukai, and M. Senoh Appl. Phys. Lett. 64 1994 1687
- (1994) Appl. Phys. Lett. , vol.64 , pp. 1687
- Nakamura, S.¹ Mukai, T.² Senoh, M.³

2
- 0029779805
- S. Nakamura, M. Senoh, S. Nagahama, N. Iwasa, T. Yamada, T. Marsushita, H. Kiyoku, and Y. Sugimoto Jpn. J. Appl. Phys. 35 1996 L74
- (1996) Jpn. J. Appl. Phys. , vol.35
- Nakamura, S.¹ Senoh, M.² Nagahama, S.³ Iwasa, N.⁴ Yamada, T.⁵ Marsushita, T.⁶ Kiyoku, H.⁷ Sugimoto, Y.⁸

3
- 0030677214
- S. Nakamura J. Crystal Growth 170 1997 11
- (1997) J. Crystal Growth , vol.170 , pp. 11
- Nakamura, S.¹

4
- 0001866991
- M.A.L. Johnson, W.C. Hughes, W.H. Rowland Jr., J.W. Cook Jr., J.F. Schetzina, M. Leonard, H.S. Kong, J.A. Edmond, and J. Zawada J. Crystal Growth 175/176 1997 72
- (1997) J. Crystal Growth , vol.175-176 , pp. 72
- Johnson, M.A.L.¹ Hughes, W.C.² Rowland Jr., W.H.³ Cook Jr., J.W.⁴ Schetzina, J.F.⁵ Leonard, M.⁶ Kong, H.S.⁷ Edmond, J.A.⁸ Zawada, J.⁹

5
- 0030230787
- T.S. Cheng, S.E. Hooper, L.C. Jenkins, C.T. Foxon, D.E. Lacklison, J.D. Dewship, and J.W. Orton J. Crystal Growth 166 1996 597
- (1996) J. Crystal Growth , vol.166 , pp. 597
- Cheng, T.S.¹ Hooper, S.E.² Jenkins, L.C.³ Foxon, C.T.⁴ Lacklison, D.E.⁵ Dewship, J.D.⁶ Orton, J.W.⁷

6
- 0031150306
- W.A. Melton, and J.I. Pancove J. Crystal Growth 178 1997 168
- (1997) J. Crystal Growth , vol.178 , pp. 168
- Melton, W.A.¹ Pancove, J.I.²

7
- 0031150305
- R.D. Dupuis J. Crystal Growth 178 1997 56
- (1997) J. Crystal Growth , vol.178 , pp. 56
- Dupuis, R.D.¹

8
- 0032208536
- S.T. Kim, Y.J. Lee, D.C. Moon, C.H. Hong, and T.K. Yoo J. Crystal Growth 194 1998 37
- (1998) J. Crystal Growth , vol.194 , pp. 37
- Kim, S.T.¹ Lee, Y.J.² Moon, D.C.³ Hong, C.H.⁴ Yoo, T.K.⁵

9
- 0031150309
- S. Porowski, and I. Grzegory J. Crystal Growth 178 1997 174
- (1997) J. Crystal Growth , vol.178 , pp. 174
- Porowski, S.¹ Grzegory, I.²

10
- 0001888363
- P.G. Baranov, E.N. Mokhov, A.O. Ostroumov, M.G. Ramm, M.S. Ramm, V.V. Ratnikov, A.D. Roenkov, Yu.A. Vodakov, A.A. Wolfson, G.V. Saparin, S.Yu. Karpov, D.V. Zimina, Yu.N. Makarov, and H. Juergensen MRS Internet J. Nitride Semicond. Res. 3 1998 50
- (1998) MRS Internet J. Nitride Semicond. Res. , vol.3 , pp. 50
- Baranov, P.G.¹ Mokhov, E.N.² Ostroumov, A.O.³ Ramm, M.G.⁴ Ramm, M.S.⁵ Ratnikov, V.V.⁶ Roenkov, A.D.⁷ Vodakov, Yu.A.⁸ Wolfson, A.A.⁹ Saparin, G.V.¹⁰ Karpov, S.Yu.¹¹ Zimina, D.V.¹² Makarov, Yu.N.¹³ Juergensen, H.¹⁴

11
- 0001835832
- E. Ejder J. Crystal Growth 22 1974 44
- (1974) J. Crystal Growth , vol.22 , pp. 44
- Ejder, E.¹

12
- 0002528261
- D. Elwell, R.S. Feigelson, M.M. Simkins, and W.A. Tiller J. Crystal Growth 66 1984 45
- (1984) J. Crystal Growth , vol.66 , pp. 45
- Elwell, D.¹ Feigelson, R.S.² Simkins, M.M.³ Tiller, W.A.⁴

13
- 85047675791
- R.B. Zetterstorm J. Mater. Sci. 5 1970 1102
- (1970) J. Mater. Sci. , vol.5 , pp. 1102
- Zetterstorm, R.B.¹

14
- 0032022835
- H. Yamane, M. Shimada, T. Sekiguchi, and F.J. DiSalvo J. Crystal Growth 186 1998 8
- (1998) J. Crystal Growth , vol.186 , pp. 8
- Yamane, H.¹ Shimada, M.² Sekiguchi, T.³ Disalvo, F.J.⁴

15
- 23844513066
- P. Konkapaka, H. Wu, Y. Makarov, and M.G. Spencer Mater. Res. Soc. Symp. Proc. 831 2004 E11.33.1
- (2004) Mater. Res. Soc. Symp. Proc. , vol.831
- Konkapaka, P.¹ Wu, H.² Makarov, Y.³ Spencer, M.G.⁴

16
- 27344458855
- H. Wu, P. Konkapaka, Y. Makarov, and M.G. Spencer Phys. Stat. Sol. (c) 2 2005 2032
- (2005) Phys. Stat. Sol. (C) , vol.2 , pp. 2032
- Wu, H.¹ Konkapaka, P.² Makarov, Y.³ Spencer, M.G.⁴

17
- 33244490889
- private communication
- Dr. Yuri Makarov, private communication.
- Makarov, Y.¹

18
- 12844275098
- C.Y. Nam, D. Tham, and J.E. Fischer Appl. Phys. Lett. 85 2004 5676
- (2004) Appl. Phys. Lett. , vol.85 , pp. 5676
- Nam, C.Y.¹ Tham, D.² Fischer, J.E.³

19
- 0034276151
- M. Gandouzi, J.C. Bourgoin, J. Mimila-Arroyo, Cl. Grattepain, and Ch. Grattepain J. Crystal Growth 218 2000 167
- (2000) J. Crystal Growth , vol.218 , pp. 167
- Gandouzi, M.¹ Bourgoin, J.C.² Mimila-Arroyo, J.³ Grattepain, Cl.⁴ Grattepain, Ch.⁵

20
- 84975371437
- Frosch J. Electrochem. Soc. 111 1964 180
- (1964) J. Electrochem. Soc. , vol.111 , pp. 180
- Frosch¹

21
- 1342327999
- Y.J. Park, C.S. Oh, T.H. Yeom, and Y.M. Yu J. Crystal Growth 264 2004 1
- (2004) J. Crystal Growth , vol.264 , pp. 1
- Park, Y.J.¹ Oh, C.S.² Yeom, T.H.³ Yu, Y.M.⁴

22
- 0001966460
- H.Y. Peng, X.T. Zhou, N. Wang, Y.F. Zheng, L.S. Liao, W.S. Shi, C.S. Lee, and S.T. Lee Chem. Phys. Lett. 327 2000 263
- (2000) Chem. Phys. Lett. , vol.327 , pp. 263
- Peng, H.Y.¹ Zhou, X.T.² Wang, N.³ Zheng, Y.F.⁴ Liao, L.S.⁵ Shi, W.S.⁶ Lee, C.S.⁷ Lee, S.T.⁸

23
- 0032803639
- D.P. Butt, Y. Park, and T.N. Taylor J. Nucl. Mater. 264 1999 71
- (1999) J. Nucl. Mater. , vol.264 , pp. 71
- Butt, D.P.¹ Park, Y.² Taylor, T.N.³

24
- 0001678256
- Pergamon Press, New York
- M. Dudley, Encyclopedia of Advanced Materials, vol. 4, Pergamon Press, New York, 1994, p. 2950.
- (1994) Encyclopedia of Advanced Materials , vol.4 , pp. 2950
- Dudley, M.¹

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.