Fabrication of 3-in GaN substrates by hydride vapor phase epitaxy using void-assisted separation method

Journal of Crystal Growth

Volumn 310, Issue 1, 2008, Pages 5-7

  Yoshida, Takehiro ^a   Oshima, Yuichi ^a   Eri, Takeshi ^a   Ikeda, Ken ^a   Yamamoto, Shunsuke ^a   Watanabe, Kazutoshi ^a   Shibata, Masatomo ^a   Mishima, Tomoyoshi ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

A1. Substrates; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

CARRIER CONCENTRATION; CARRIER MOBILITY; DISLOCATIONS (CRYSTALS); SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR MATERIALS; SUBSTRATES; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; HYDRIDE VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 36549063387     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.10.014     Document Type: Article

References (9)

1. Kelly M.K., Ambacher O., Dimitrov R., Handschuh R., and Stutzmann M. Phys. Stat. Sol. (A) 159 (1997) R3
2. Melnik Y.V., Vassilevski K.V., Nikitina I.P., Babanin A.I., Davydov V.Y., and Dmitriev V.A. MRS Internet J. Nitride Semicond. Res. 2 (1997) 39
3. Nakamura S., et al. Jpn. J. Appl. Phys. 37 (1998) L309
4. Oshima Y., Eri T., Shibata M., Sunakawa H., Obayashi K., Ichihashi T., and Usui A. Jpn. J. Appl. Phys. 42 (2003) L1
5. Oshima Y., Eri T., Shibata M., Sunakawa H., and Usui A. Phys. Stat. Sol. (A) 194 (2002) 554
6. Usui A., Ichihashi T., Kobayashi K., Sunakawa H., Oshima Y., Eri T., and Shibata M. Phys. Stat. Sol. (A) 194 (2002) 572
7. Mayumi M., Saitoh F., Kumagai Y., Takemoto K., and Koukitu A. Jpn. J. Appl. Phys. 39 (2000) L707
8. Nakamura S., Mukai T., and Senoh M. Jpn. J. Appl. Phys. 31 (1992) 2883
9. Oshima Y., Yoshida T., Eri T., Shibata M., and Mishima T. Jpn. J. Appl. Phys. 45 (2006) 7685