Bowing of thick GaN layers grown by HVPE using ELOG

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 1466-1470

  Hennig, Ch ^a   Richter, E ^a   Zeimer, U ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

EXTRINSIC STRESSES; GAN LAYERS; INTRINSIC STRESSES; WAFER BREAKAGE; 81.05.EA; 81.15.KK; EXTRINSIC STRESS; INTRINSIC STRESS; MASK MATERIALS; SAPPHIRE SUBSTRATES; SHEAR FORCE;

COOLING; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEPARATION; STRESSES; THERMAL EXPANSION; THICKNESS MEASUREMENT; VAPOR PHASE EPITAXY;

GALLIUM NITRIDE;

EID: 33746362599     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565402     Document Type: Conference Paper

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