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Volumn 6473, Issue , 2007, Pages

Defect studies in HYPE GaN by positron annihilation spectroscopy

Author keywords

GaN; HVPE; Positron annihilation; Vacancy

Indexed keywords

DEFECTS; DISLOCATIONS (CRYSTALS); DOPING (ADDITIVES); IMPURITIES; POSITRON ANNIHILATION SPECTROSCOPY; POSITRONS;

EID: 34248682142     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.697892     Document Type: Conference Paper
Times cited : (9)

References (32)
  • 1
    • 0035876466 scopus 로고    scopus 로고
    • Comprehensive characterization of hydride VPE grown GaN layers and templates
    • H. Morkoç, "Comprehensive characterization of hydride VPE grown GaN layers and templates", Mat. Sci. Eng. R 33, 135-207, 2001.
    • (2001) Mat. Sci. Eng. R , vol.33 , pp. 135-207
    • Morkoç, H.1
  • 2
    • 33745761034 scopus 로고    scopus 로고
    • M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, P. Gibart, Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction, phys. status solidi (b) 243, 1545-1550, 2006.
    • M. Drakopoulos, M. Laügt, T. Riemann, B. Beaumont, P. Gibart, "Structural evaluation of GaN/sapphire grown by epitaxial lateral overgrowth by X-ray microdiffraction", phys. status solidi (b) 243, 1545-1550, 2006.
  • 3
    • 33745033596 scopus 로고    scopus 로고
    • I. Grzegory, B. Lucznik, M. Bockowski, B. Pastuszka, G. Kamler, G. Nowak, M. Krysko, S. Krukowski, S. Porowski, Crystallization of GaN by HVPE on pressure grown seeds, phys. status solidi (a) 203, 1654-1657, 2006.
    • I. Grzegory, B. Lucznik, M. Bockowski, B. Pastuszka, G. Kamler, G. Nowak, M. Krysko, S. Krukowski, S. Porowski, "Crystallization of GaN by HVPE on pressure grown seeds", phys. status solidi (a) 203, 1654-1657, 2006.
  • 10
    • 34248650781 scopus 로고    scopus 로고
    • Dominant intrinsic acceptors in GaN and ZnO
    • K. Saarinen, S. Hautakangas, and F. Tuomisto, "Dominant intrinsic acceptors in GaN and ZnO", Phys. Scripta T126, 105-109, 2006.
    • (2006) Phys. Scripta , vol.T126 , pp. 105-109
    • Saarinen, K.1    Hautakangas, S.2    Tuomisto, F.3
  • 11
    • 33745742593 scopus 로고    scopus 로고
    • N complexes in HVPE GaN by high pressure and high temperature annealing, phys. status solidi (b) 243, 1436-1440, 2006.
    • N complexes in HVPE GaN by high pressure and high temperature annealing", phys. status solidi (b) 243, 1436-1440, 2006.
  • 14
    • 33645689136 scopus 로고    scopus 로고
    • Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy
    • 066105:1-3
    • F. Tuomisto, K. Saarinen, M. Bockowski, T. Suski, T. Paskova, and B. Monemar, "Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy", J. Appl. Phys. 99, 066105:1-3, 2006.
    • (2006) J. Appl. Phys , vol.99
    • Tuomisto, F.1    Saarinen, K.2    Bockowski, M.3    Suski, T.4    Paskova, T.5    Monemar, B.6
  • 15
    • 0344926554 scopus 로고    scopus 로고
    • F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, and K. Saarinen, Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals, phys. status solidi (b) 240, 289-292, 2003.
    • F. Tuomisto, T. Suski, H. Teisseyre, M. Krysko, M. Leszczynski, B. Lucznik, I. Grzegory, S. Porowski, D. Wasik, A. Witowski, W. Gebicki, P. Hageman, and K. Saarinen, "Polarity dependent properties of GaN layers grown by hydride vapor phase epitaxy on GaN bulk crystals", phys. status solidi (b) 240, 289-292, 2003.
  • 17
    • 34248653293 scopus 로고    scopus 로고
    • F. Tuomisto, T. Paskova, S. Figge, D .Hommel, and B. Monemar, Vacancy defect disitribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy, J. Crystal Growth, in press.
    • F. Tuomisto, T. Paskova, S. Figge, D .Hommel, and B. Monemar, "Vacancy defect disitribution in heteroepitaxial a-plane GaN grown by hydride vapor phase epitaxy", J. Crystal Growth, in press.
  • 20
    • 77956761126 scopus 로고    scopus 로고
    • Positron Annihilation Spectroscopy of Defects in Semiconductors
    • edited by M. Stavola, Academic Press, New York
    • K. Saarinen, P. Hautojärvi, and C. Corbel, "Positron Annihilation Spectroscopy of Defects in Semiconductors", in Identification of Defects in Semiconductors, edited by M. Stavola, 209-285, Academic Press, New York, 1998.
    • (1998) Identification of Defects in Semiconductors , pp. 209-285
    • Saarinen, K.1    Hautojärvi, P.2    Corbel, C.3
  • 21
    • 0001616131 scopus 로고
    • Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy
    • K. Saarinen, A. P. Seitsonen, P. Hautojärvi, and C. Corbel, "Introduction and recovery of point defects in electron-irradiated Te- and Si-doped GaAs studied by positron lifetime spectroscopy ", Phys. Rev. B 52, 10932-10946, 1995.
    • (1995) Phys. Rev. B , vol.52 , pp. 10932-10946
    • Saarinen, K.1    Seitsonen, A.P.2    Hautojärvi, P.3    Corbel, C.4
  • 22
    • 0001602949 scopus 로고
    • Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs
    • C. Corbel, F. Pierre, K. Saarinen, P. Hautojärvi, and P. Moser, "Gallium vacancies and gallium antisites as acceptors in electron-irradiated semi-insulating GaAs", Phys. Rev. B 45, 3386-3399, 1992.
    • (1992) Phys. Rev. B , vol.45 , pp. 3386-3399
    • Corbel, C.1    Pierre, F.2    Saarinen, K.3    Hautojärvi, P.4    Moser, P.5
  • 23
    • 0000394550 scopus 로고
    • Positron trapping in semiconductors
    • M. J. Puska, C. Corbel, and R. M. Nieminen, "Positron trapping in semiconductors", Phys. Rev. B 41, 9980-9993, 1990.
    • (1990) Phys. Rev. B , vol.41 , pp. 9980-9993
    • Puska, M.J.1    Corbel, C.2    Nieminen, R.M.3
  • 25
    • 0000403169 scopus 로고    scopus 로고
    • Characterization of native point defects in GaN by positron annihilation spectroscopy
    • edited by M.O. Manasreh, Elsevier, Amsterdam
    • K. Saarinen, "Characterization of native point defects in GaN by positron annihilation spectroscopy", in III-V Nitride Semiconductors: Electrical, Structural and Defects Properties, edited by M.O. Manasreh, 109-163, Elsevier, Amsterdam, 2000.
    • (2000) III-V Nitride Semiconductors: Electrical, Structural and Defects Properties , pp. 109-163
    • Saarinen, K.1
  • 26
    • 85010812746 scopus 로고    scopus 로고
    • Gallium vacancies and the yellow luminescence in GaN
    • J. Neugebauer and C. van de Walle, "Gallium vacancies and the yellow luminescence in GaN", Appl. Phys. Lett. 69, 503-505, 1996.
    • (1996) Appl. Phys. Lett , vol.69 , pp. 503-505
    • Neugebauer, J.1    van de Walle, C.2
  • 27
    • 0642279688 scopus 로고    scopus 로고
    • Point-defect complexes and broadband luminescence in GaN and AlN
    • T. Mattila and R. M. Nieminen, "Point-defect complexes and broadband luminescence in GaN and AlN", Phys. Rev. 555, 9571-9576, 1997.
    • (1997) Phys. Rev , vol.555 , pp. 9571-9576
    • Mattila, T.1    Nieminen, R.M.2
  • 30
    • 0035893967 scopus 로고    scopus 로고
    • Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals
    • 233201
    • K. Saarinen, T. Suski, I. Grzegory, and D. C. Look, "Thermal stability of isolated and complexed Ga vacancies in GaN bulk crystals", Phys. Rev. B 64, 233201:1-4, 2001.
    • (2001) Phys. Rev. B , vol.64 , pp. 1-4
    • Saarinen, K.1    Suski, T.2    Grzegory, I.3    Look, D.C.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.