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D. Gogova, C. Hemmingsson, B. Monemar, E. Talik, M. Kruczek, F. Tuomisto, and K. Saarinen, "Investigation of the structural and optical properties of free-standing GaN grown by HVPE", J. Phys. D: Appl. Phys. 38, 2332-2337, 2005.
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D. Gogova, D. Siche, R. Fornari, B. Monemar, P. Gibart, L. Dobos, B. Pecz, F. Tuomisto, R. Bayazitov, and G. Zollo, "Optical and structural studies of high-quality bulk-like GaN grown by HVPE on a MOVPE AlN buffer layer", Semicond. Sci. Techn. 21, 702-708, 2006.
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Direct experimental evidence of impurity decoration of Ga vacancies in GaN
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S. Hautakangas, V. Ranki, I. Makkonen, M. J. Puska, K. Saarinen, X. Xu, and D. C. Look, "Direct experimental evidence of impurity decoration of Ga vacancies in GaN", Phys. Rev. B 73, 193301:1-4, 2006.
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N complexes in HVPE GaN by high pressure and high temperature annealing", phys. status solidi (b) 243, 1436-1440, 2006.
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F. Tuomisto, K. Saarinen, M. Bockowski, T. Suski, T. Paskova, and B. Monemar, "Thermal stability of in-grown vacancy defects in GaN grown by hydride vapor phase epitaxy", J. Appl. Phys. 99, 066105:1-3, 2006.
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