Thermal and optical properties of bulk GaN crystals fabricated through hydride vapor phase epitaxy with void-assisted separation

Journal of Applied Physics

Volumn 98, Issue 10, 2005, Pages

  Oshima, Yuichi ^a   Suzuki, Takayuki ^a   Eri, Takeshi ^a   Kawaguchi, Yusuke ^a   Watanabe, Kazutoshi ^a   Shibata, Masatomo ^a   Mishima, Tomoyoshi ^a  

^a HITACHI CABLE LTD   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATION DENSITY; MATERIAL PARAMETERS; WAVELENGTH DEPENDENCE;

GALLIUM NITRIDE; LIGHT EMITTING DIODES; OPTICAL PROPERTIES; THERMAL EXPANSION; VAPOR PHASE EPITAXY;

CRYSTALLINE MATERIALS;

EID: 28644442215     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2132508     Document Type: Article

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