Development of 50 mm diameter non-polar gallium nitride substrates for device applications

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 567-570

  Maruska, H P ^a   Hill, D W ^a   Chou, M M C ^a   Gallagher, J J ^a   Chai, B H ^a   Vanfleet, R ^b   Simmons, J ^b   Bhattacharyya, A ^c   Friel, I ^c   Chen, Tai Chou ^c   Li, W ^c   Cabalu, J ^c   Fedyunin, Y ^c   Ludwig Jr , K F ^c   Moustakas, T D ^c  

^a Crystal Photonics Inc Sanford   (United States)

^b UNIVERSITY OF CENTRAL FLORIDA   (United States)

^c BOSTON UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC FIELDS; ETCHING; LIGHT EMITTING DIODES; MOLECULAR BEAM EPITAXY; SEMICONDUCTOR QUANTUM WELLS; SUBSTRATES; VAPOR PHASE EPITAXY; FILMS; GALLIUM ALLOYS; GALLIUM NITRIDE; GROWTH (MATERIALS); INDIUM; INDIUM PHOSPHIDE; MOLECULAR BEAMS; NITRIDES; NITROGEN; NITROGEN PLASMA; OPTICAL FILMS; PHOTONIC CRYSTALS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; SILICON WAFERS; STACKING FAULTS; WET ETCHING;

NON-POLAR GALLIUM NITRIDE; WET CHEMICAL ETCHING;

SEMICONDUCTING GALLIUM COMPOUNDS; EPITAXIAL GROWTH;

DEVICE APPLICATION; FREE-STANDING WAFERS; II-IV SEMICONDUCTORS; INVERSION DOMAINS; MOLECULAR BEAM EPITAXIAL GROWTH; NON-POLAR GALLIUM NITRIDES; PLASMA TEMPERATURE; STACKING;

EID: 0037810733     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (11)

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