Dislocation reduction in GaN crystal by advanced-DEEP

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 377-383

  Motoki, Kensaku ^a   Okahisa, Takuji ^a   Hirota, Ryu ^a   Nakahata, Seiji ^a   Uematsu, Koji ^a   Matsumoto, Naoki ^a  

^a SUMITOMO ELECTRIC INDUSTRIES LTD   (Japan)

Author keywords

A1. Line defects; A1. Substrate; A2. Single crystal growth; A3. Hydride vapor phase epitaxy; B1. Nitride; B2. Semiconducting gallium compounds

Indexed keywords

CRYSTAL GROWTH; DISLOCATIONS (CRYSTALS); SEMICONDUCTING GALLIUM COMPOUNDS; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY;

DISLOCATION ELIMINATION; HYDRIDE VAPOR PHASE EPITAXY; LINE DEFECTS;

GALLIUM NITRIDE;

EID: 34347361547     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.03.038     Document Type: Article

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