Self-separation of thick two inch GaN layers grown by HVPE on sapphire using epitaxial lateral overgrowth with masks containing tungsten

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 4, Issue 7, 2007, Pages 2638-2641

  Hennig, Ch ^a   Richter, E ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ABSOLUTE STRUCTURE; AREA RATIOS; EPITAXIAL LATERAL OVERGROWTH; GAN LAYERS; LATERAL OVER-GROWTH; NITRIDE SEMICONDUCTORS;

CORUNDUM; CRYSTALS; ELECTRIC CONDUCTIVITY; EPITAXIAL GROWTH; EPITAXIAL LAYERS; GALLIUM ALLOYS; GALLIUM NITRIDE; ISOMERS; NITRIDES; NONMETALS; SEMICONDUCTING GALLIUM; SEMICONDUCTING SILICON COMPOUNDS; SEMICONDUCTOR MATERIALS; SEPARATION; SILICON; SILICON NITRIDE; TUNGSTEN;

SIZE SEPARATION;

EID: 39249083005     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200674855     Document Type: Conference Paper

References (6)

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