Freestanding 2-in GaN layers using lateral overgrowth with HVPE

Journal of Crystal Growth

Volumn 310, Issue 5, 2008, Pages 911-915

  Hennig, Ch ^a   Richter, E ^a   Weyers, M ^a   Trankle G ^a  

^a LEIBNIZ INSTITUT FÜR HÖCHSTFREQUENZTECHNIK   (Germany)

Author keywords

A2. Seed crystals; A3. Epitaxial lateral overgrowth; A3. Hydride vapor phase epitaxy; B1. Nitrides; B2. Semiconducting III V materials

Indexed keywords

COOLING; GROWTH TEMPERATURE; SAPPHIRE; SILICIDES; TUNGSTEN;

EPITAXIAL LATERAL OVERGROWTH; HYDRIDE VAPOR PHASE EPITAXY;

CRYSTAL GROWTH;

EID: 39249085136     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.11.102     Document Type: Article

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