Role of dislocation-free GaN substrates in the growth of indium containing optoelectronic structures by plasma-assisted MBE

Journal of Crystal Growth

Volumn 305, Issue 2 SPEC. ISS., 2007, Pages 346-354

  Skierbiszewski, C ^a,b   Siekacz, M ^a,b   Perlin, P ^a,b   Feduniewicz Zmuda, A ^b   Cywinski G ^a   Grzegory, I ^a,b   Leszczynski M ^a,b   Wasilewski, Z R ^c   Porowski, S ^a,b  

^a INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^b TOPGAN LTD   (Poland)

^c NATIONAL RESEARCH COUNCIL CANADA   (Canada)

Author keywords

A3. PAMBE; B1. GaN; B3. Nitride blue violet laser diodes

Indexed keywords

EPITAXIAL GROWTH; GALLIUM NITRIDE; GROWTH TEMPERATURE; MOLECULAR BEAM EPITAXY; OPTOELECTRONIC DEVICES;

METAL RICH CONDITIONS; MULTILAYER STRUCTURES; OPTOELECTRONIC STRUCTURES;

SEMICONDUCTOR LASERS;

EID: 34347366187     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2007.04.002     Document Type: Article

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