Behavior of trench surface by H2 annealing for reliable trench gate oxide

Journal of Crystal Growth

Volumn 255, Issue 1-2, 2003, Pages 123-129

  Kim, Sang Gi ^a,c   Roh, Tae Moon ^a   Kim, Jongdae ^a   Park, Il Yong ^a   Lee, Ju Wook ^a   Koo, Jin Gun ^a   Bae, In Ho ^b   Cho, Kyoung Ik ^a  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Yeungnam University   (South Korea)

^c Korea Basic Science Institute (KBSI)   (South Korea)

Author keywords

A1. Atomic migration; A1. Crystal structure; A1. Etching; A1. Interfaces; A1. Surface processes; B2. Semiconducting materials; B3. Field effect transistors

Indexed keywords

ANNEALING; CRYSTAL STRUCTURE; ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; ETCHING; HYDROGEN; INTERFACES (MATERIALS); LEAKAGE CURRENTS; MOSFET DEVICES;

DRAIN CURRENT; TRENCH CORNER ROUNDINGS (TCR);

GATES (TRANSISTOR);

EID: 0038717094     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(03)01238-7     Document Type: Article

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