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Volumn 81, Issue 1, 2005, Pages 173-176

Effects of chlorine on interfacial properties and reliability of SiO 2 grown on 6H-SiC

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CAPACITANCE; CHLORINE; CONTAMINATION; ETHYLENE; EVAPORATION; IONIZATION; MOS CAPACITORS; OXIDATION; PASSIVATION; RELIABILITY;

INTERFACE-STATE DENSITY; INTERFACIAL PROPERTIES; OXIDE-CHARGE DENSITY; PASSIVATION EFFECTS;

SILICON CARBIDE;

EID: 18244400418 PISSN: 09478396 EISSN: None Source Type: Journal
DOI: 10.1007/s00339-004-2882-9 Document Type: Article

Times cited : (9)

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