Interfacial properties and reliability of SiO2 grown on 6H-SiC in dry O2 plus trichloroethylene

Microelectronics Reliability

Volumn 44, Issue 4, 2004, Pages 577-580

  Lai, P T ^a   Xu, J P ^b   Wu, H P ^b   Chan, C L ^a  

^a UNIVERSITY OF HONG KONG   (Hong Kong)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; AROMATIC COMPOUNDS; CARRIER MOBILITY; GATES (TRANSISTOR); HOT CARRIERS; INTERFACES (MATERIALS); MOS CAPACITORS; OXIDATION; RELIABILITY; SILICA; SILICON WAFERS; SYNTHESIS (CHEMICAL);

HOT-CARRIER RELIABILITY; INTERFACE QUALITY;

SEMICONDUCTOR GROWTH;

EID: 1642290095     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2004.01.009     Document Type: Article

References (10)

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