Improved interface properties of p-type 6H-SiC/SiO2 system by NH3 pretreatment

Applied Physics Letters

Volumn 76, Issue 3, 2000, Pages 372-374

  Xu, J P ^a   Lai, P T ^b   Chan, C L ^b   Cheng, Y C ^b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b UNIVERSITY OF HONG KONG   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041729304     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.126120     Document Type: Article

References (11)

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