Electrical properties of the silicon oxide/Si structure formed with perchloric acid at 203°C

Solid State Communications

Volumn 118, Issue 8, 2001, Pages 391-394

  Sakurai, Takeaki ^a   Nishiyama, Masayoshi ^a   Nishioka, Yasushiro ^b   Kobayashi, Hikaru ^a  

^a OSAKA UNIVERSITY   (Japan)

^b Texas Instruments Japan Ltd   (Japan)

Author keywords

A. Insulators; A. Semiconductors; A. Thin films; E. Photoelectron spectroscopies

Indexed keywords

CURRENT DENSITY; DESORPTION; ELECTRIC INSULATORS; INTERFACES (MATERIALS); LEAKAGE CURRENTS; PHOTOELECTRON SPECTROSCOPY; SILICA; THIN FILMS;

PERCHLORIC ACIDS;

SEMICONDUCTING SILICON COMPOUNDS;

EID: 0035938719     PISSN: 00381098     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1098(01)00133-8     Document Type: Article

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