Influence of the metal electrode on the characteristics of thermal Ta2O5 capacitors

Microelectronic Engineering

Volumn 83, Issue 10, 2006, Pages 1918-1926

  Atanassova, E ^a   Spassov, D ^a   Paskaleva, A ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

High k dielectrics; Metal electrodes; Ta2O5 capacitors

Indexed keywords

ALUMINUM; CAPACITORS; CURRENT DENSITY; ELECTRIC CONDUCTIVITY; ELECTRODEPOSITION; LEAKAGE CURRENTS; PERMITTIVITY; RADIATION DAMAGE; SPUTTERING; THICKNESS MEASUREMENT; THIN FILMS; TUNGSTEN; VAPOR DEPOSITION; TANTALUM COMPOUNDS;

CURRENT DETERIORATION; GATE CAPACITORS; HIGH-K DIELECTRICS; TA2O5-CAPACITORS; DYNAMIC RANDOM ACCESS MEMORIES; METAL ELECTRODE; TIN-ELECTRODED CAPACITORS;

TANTALUM COMPOUNDS; ELECTRODES;

EID: 33745136120     PISSN: 01679317     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mee.2006.01.043     Document Type: Article

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