Charge trapping and conduction mechanisms in Ta2O5 on nitrided silicon

Journal of Physics D: Applied Physics

Volumn 38, Issue 23, 2005, Pages 4210-4216

  Paskaleva, A ^a   Atanassova, E ^a   Georgieva, M ^a  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON TRAPS; INTERFACES (MATERIALS); ION IMPLANTATION; NITRIDING; SPUTTERING;

CHARGE TRAPPING; CONDUCTION MECHANISMS; PLASMA IMMERSION;

TANTALUM COMPOUNDS;

EID: 27844433515     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/38/23/011     Document Type: Article

References (31)

1. Wilk G D, Wallace R M and Anthony J M 2001 J. Appl. Phys. 89 5243
2. Chanelliere C, Autran J L, Devine R A B and Balland B 1998 Mater. Sci. Eng. R 22 269
3. Atanassova E 1999 Microelectron. Reliab. 39 1185
4. Shibata S 1996 Thin Solid Films 227 1
5. Sivaramakrishnan V, Narwankar P, Armer H, Liu P, Zhao J and Rajagopalan R 2000 Semicond. Fabtech edition 12, p 217
6. Hubbard K J and Schlom D G 1996 J. Mater. Res. 11 2757
7. Kim I, Ahn S, Cho B, Ahn S, Lee J, Chun J and Lee W 1994 Japan. J. Appl. Phys. 33 6691
8. Miyazaki S 2001 Appl. Surf. Sci. 7579 1
9. Lu H C, Gusev E, Yasuda N, Green M, Alers G, Garfunkel E and Gustafsson T 2000 Appl. Surf. Sci. 166 465
10. Alers G B, Werder D J, Chabal Y, Lu H C, Gusev E P, Garfunkel E, Gustafsson T and Urdahl R S 1998 Appl. Phys. Lett. 73 1517
11. Atanassova E and Spassov D 1998 Appl. Surf. Sci. 135 71
12. Atanassova E and Dimitrova T 2001 Handbook of Surfaces and Interfaces of Materials vol 4 ed H S Nalwa (San Diego, CA: Academic) pp 439-79
13. Atanassova E and Paskaleva A 2002 Microelectron. Reliab. 42 157
14. Atanassova E, Kalitzova M, Zollo G, Paskaleva A, Peeva A, Georgieva M and Vitali G 2003 Thin Solid Films 426 191
15. Atanassova E, Tyuliev G, Paskaleva A, Spassov D and Kostov K 2004 Appl. Surf. Sci. 225 86
16. Kamiyama S, Lesaicherre P-Y, Suzuki H, Sakai A, Nishiyama I and Ishitani A 1993 J. Electrochem. Soc. 140 1617
17. Son K-A, Mao A Y, Kim B Y, Liu F, Pylant E D, Hess D A, White J M, Kwong D L, Roberts D A and Vrtis R N 1998 J. Vac. Sci. Technol. A 16 1670
18. Gusev E P, Lu H-C, Garfunkel E L, Gustafsson T and Green M L 1999 IBM J. Res. Dev. 43 265
19. Kirsch P D, Kang C S, Lozano J, Lee J C and Ekerdt J G 2002 J. Appl. Phys. 91 4353
20. Gilmer M C et al 1999 Mater. Res. Soc. Symp. Proc. 567 323-41
21. Lai Y-Sh, Chen K-J and Chen J S 2002 J. Appl. Phys. 91 6428
22. Beloto A F, Abramof E, Ueda M, Berni L A and Gomes G F 1999 Braz. J. Phys. 29 768
23. Ren Z-M, Ying Z-F, Hiong X-X, He M-Q, Li F M, Du Y C and Cheng L Y 1994 Appl. Phys. A 58 395
24. Vasquez R P and Madhukar A 1985 Appl. Phys. Lett. 47 998
25. Lo G Q, Kwong D L and Lee S 1992 Appl. Phys. Lett. 60 3286
26. Roy P K and Kizilyalli I C 1998 Appl. Phys. Lett. 72 2835
27. Cartier E, Buchanan D A and Dunn G J 1994 Appl. Phys. Lett. 64 901
28. Kirsch P D and Ekerdt J G J 2001 J. Vac. Sci. Technol. A 19 2222
29. Green M L, Brasen D, Evens-Lutterodt K W, Feldman L C, Krisch K, Lennard W, Tang H-T, Manchanda L and Tang M-T 1994 Appl. Phys. Lett. 65 848
30. Fleetwood D M, Shaneyleft M R, Warren W L, Schwank J R, Meisenheimer T L and Winokur P S 1995 Microelectron. Reliab. 35 403
31. Sze S M 1981 Phys. Semiconductor Devices 2nd edn (New York: Wiley-Interscience)