Influence of a 5 Å tantalum nitride interface layer on dielectric properties of zirconium-doped tantalum oxide high-k films

Journal of the Electrochemical Society

Volumn 152, Issue 8, 2005, Pages

  Tewg, Jun Yen ^a   Kuo, Yue ^a   Lu, Jiang ^a   Schueler, Bruno W ^b  

^a TEXAS A AND M UNIVERSITY   (United States)

^b Physical Electronics   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC PROPERTIES; HYSTERESIS; MOS DEVICES; ZIRCONIUM;

FLATBAND VOLTAGE; INTERFACE LAYERS; SILICON SUBSTRATES;

TANTALUM COMPOUNDS;

EID: 25644442380     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1945707     Document Type: Article

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