Ultrathin Ta2O5 film growth by chemical vapor deposition of Ta(N(CH3)2)5 and O2 on bare and SiOxNy-passivated Si(IOO) for gate dielectric applications

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 16, Issue 3, 1998, Pages 1670-1675

  Son, K A ^a   Mao, A Y ^b   Kim, B Y ^b   Liu, F ^b   Pylant, E D ^a   Hess, D A ^a   White, J M ^a   Kwong, D L ^b   Roberts, D A ^c   Vrtis, R N ^c  

^a UNIVERSITY OF TEXAS AT AUSTIN   (United States)

^b The University of Texas at Austin   (United States)

^c AIR PRODUCTS AND CHEMICALS INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARBON FILMS; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; GATE DIELECTRICS; HIGH-K DIELECTRIC; NITRIC OXIDE; OXYGEN; POLYMER BLENDS; SECONDARY ION MASS SPECTROMETRY; SILICA; SILICON; TANTALUM OXIDES; X RAY PHOTOELECTRON SPECTROSCOPY;

CHEMICAL COMPOSITIONS; ELECTRICAL MEASUREMENT; EQUIVALENT THICKNESS; FILM DEPOSITION; GATE DIELECTRIC APPLICATIONS; OXYGEN FLOW RATES; POST DEPOSITION ANNEALING; TIME-OF-FLIGHT SECONDARY ION MASS SPECTROSCOPY;

PASSIVATION;

EID: 0000729499     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.581140     Document Type: Article

References (46)

1. H. Treichel, A, Mitwalsky, G. Tempel, G. Zorn, D. A. Bohling, K. R. Coyle, B. S. Felker, M. George, W. Kern, A. P. Lane, and N. P. Sandler, Adv. Mater. Opt. Electron, 5, 163 (1995).
2. K. Tominaga, Jpn. J. Appl. Phys. Part 2 31, L585 (1992).
3. Y. Numasawa, S. Kamiyama, M. Zenke, and M. Sakamoto, IEDM. Tech. Dig. 43 (1989).
4. N. Rausch and E. P. Burte, Microelectron. J. 25, 533 (1994).
5. S. C. Sun and T. F. Chen, IEDM Tech. Dig. 333 (1994).
6. H. Treichel, A, Mitwalsky, N. P. Sandler, D. Tribula W. Kern, and A. P. Lane, Adv. Mater. Opt. Electron. 1, 299 (1992).
7. H, Treichel, A. Mitwalsky, G. Tempel, G. Zorn, W. Kern, N. Sandler, and A. P. Lane, Mater. Res. Soc. Symp. Proc. 282, 557 (1993).
8. S. Zaima, T. Furuta, Y. Koide, and Y. Yasuda, J. Electrochem. Soc. 137, 2876 (1990).
9. H. Shinriki. and M. Nakata, IEEE Trans. Electron Devices 38, 455 (1991).
10. C. H. An and K. Sugimoto, J. Electrochem. Soc. 141, 853 (1994).
11. J. L. Autran, P. Paillet, J. L. Leray, and R. A. B. Devine, Sens. Actuators A 51, 5 (1995).
12. E. P. Burte and N. Rausch, J. Non-Cryst. Solids 187, 425 (1995).
13. R. A, B. Devine, Appl. Phys. Lett. 68, 1924 (1996).
14. S. Kamiyama, P. Lesaicherre, H. Suzuki, A. Sakai, I. Nishiyama, and A. Ishitani, J. Electrochem. Soc. 140, 1617 (1993).
15. W. S. Lau, T. S. Tan, N. P. Sandler, and B. S. Page, Jpn. J. Appl. Phys. Part 1 34, 757 (1995).
16. Z. Mingfei, F. Zhengwen, Y. Haijun, Z. Zhuangjian, and Q. Qizong, Appl. Surf. Sci. 108, 399 (1997).
17. A. Muto, F. Yano, Y. Sugawara, and S. Iijima, Jpn. J. Appl. Phys. Part 1 33, 2699 (1994).
18. H. Shinriki, Y. Nishioka, Y. Ohji, and K. Mukai, IEEE Trans. Electron Devices 36, 328 (1989).
19. P. C. Fazan, V. K. Mathews, N. Sandler, G. Q. Lo, and D. L. Kwong, IEDM Tech. Dig. 263 (1992).
20. J. Yun and S. Rhee, Thin Solid Films 292, 324 (1997).
21. S. Kim and H. J. Kim, J. Vac. Sci. Technol. B 12, 3006 (1994).
22. S. Zaima, T. Furuta, Y. Yasuda, and M. Lida, J. Electrochem, Soc. 137, 1297 (1990).
23. H. Shinriki, T. Kisu, S. Kimura, Y. Nishioka, Y. Kawamoto, and K. Mukai, IEEE Trans. Electron Devices 37, 1939 (1990).
24. E. P. Burte and N. Rausch, Microelectron. J. 24, 421 (1993).
25. G. Q. Lo, D.-L. Kwong, P. C. Fazan, V. K. Mathews, and N. Sandler, IEEE Electron Device Lett. 14, 216 (1993).
26. I. Kim, J. Kim, B. Cho, S. Ahn, J. S. Chun, and W. Lee, J. Mater. Res. 10, 2864 (1995).
27. S. Banerjee, B. Shen, I. Chen, J. Bohlman, G. Brown, and R. Doering, J. Appl. Phys. 65, 1140(1989).
28. W. Kem, A. Chen, and N. Sandler, J. Phys. IV 1, 311 (199.1).
29. K. A. Mckinley and N. P. Sandler, Thin. Solid Films 290/291, 440 (1996).
30. W. S. Lau, P. W. Qian, N. P. Sandler, K. A. Mckinley, and P. K. Chu, Jpn. J. Appl. Phys. Part 1 36, 661 (1997).
31. S. W. Park, Y. K. Baek, J. Y. Lee, C. O. Park, and H. B. Im, J. Electron, Mater. 21, 635 (1992).
32. H. Koyaina, S. Tanimoto, K. Kuroiwa, and Y. Tarui, Jpn. J. Appl. Phys. Part 1 33, 6291 (1994).
33. 5 from Schumacher, Inc., Carlsbad, CA, 1996.
34. M, M, Banaszak HoIl, P. T. Wolczanski, D. Proserpio, A. B. Ielecki, and D. B. Zax, Chem. Mater. 8, 2468 (1996).
35. W. A. Nugent, D. W. Ovenall, and S. J. Holmes, Organometallics 2, 161 (1983).
36. B. S. Meyerson, Appl. Phys. Lett. 48, 797 (1986).
37. J. F. Moulder, W. F. Stickle, P. E. Sobol, and K. D. Bomben, Handbook of X-ray Photoelectron. Spectroscopy (Physical Electronics, Inc., Eden Prairie, MN, 1995).
38. Z. H. Lu, S. P. Tay, R. Cao, and P. Pianetta, Appl. Phys. Lett. 67, 2836 (1995).
39. S. V. Govorkov, N. I. Koroteev, G. I. Petrov, I. L. Shumay, and V. V. Yakovlev, Appl. Phys. A: Solids Surf. 50, 439 (1990).
40. Z. Q. Yao, J. Appl. Phys. 78, 2906 (1995).
41. A. Kamath, D.-L. Kwong, Y. M. Sun, P. M. Blasses, and S. Whaley, Appl. Phys. Lett. 70, 63 (1997).
42. S. C. Sun and T. F. Chen, IEDM Tech. Dig. 687 (1996).
43. H. Kimura, J. Mizuki, S. Kamiyama, and H. Suzuki, Appl. Phys. Lett. 66, 2209 (1995).
44. S. Kamiyama, H. Suzuki, H. Watanabe, A. Sakai, H. Kimura, and J. Mizuki, J. Electrochem. Soc. 141, 1246 (1994).
45. y, sample.
46. N. S. Saks, D. I. Ma, and W. B. Fowler, Appl. Phys. Lett. 67, 374 (1995).