Effect of the metal gate on the breakdown characteristics and leakage current of Ta2O5 stack capacitors

Journal of Optoelectronics and Advanced Materials

Volumn 9, Issue 2, 2007, Pages 315-318

  Atanassova, E ^a   Spassov, D ^a   Paskaleva, A ^a  

^a BULGARIAN ACADEMY OF SCIENCES   (Bulgaria)

Author keywords

High k dielectrics; Metal gates; Ta2O5 capacitors

Indexed keywords

ALUMINUM; ALUMINUM COMPOUNDS; DEFECTS; DEPOSITION; ELECTRODES; HIGH-K DIELECTRIC; LEAKAGE CURRENTS; TANTALUM OXIDES; TITANIUM NITRIDE;

BREAKDOWN CHARACTERISTICS; ELECTRICAL CHARACTERISTIC; ELECTRICALLY ACTIVE CENTERS; ELECTRODE MATERIAL; METAL GATE; ORDERS OF MAGNITUDE; RADIATION DEFECTS; STACK CAPACITORS;

TUNGSTEN COMPOUNDS;

EID: 35549003714     PISSN: 14544164     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Conference Paper

References (6)

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