XPS study of N 2 annealing effect on thermal Ta 2 O 5 layers on Si

Applied Surface Science

Volumn 225, Issue 1-4, 2004, Pages 86-99

  Atanassova, E ^a   Tyuliev, G ^b   Paskaleva, A ^a   Spassov, D ^a   Kostov, K ^b  

^a INSTITUTE OF SOLID STATE PHYSICS   (Bulgaria)

^b INSTITUTE OF PHYSIOLOGY   (Bulgaria)

Author keywords

Depth profiles; N 2 annealing; Tantalum pentoxide; XPS

Indexed keywords

ANNEALING; CHEMICAL BONDS; DYNAMIC RANDOM ACCESS STORAGE; MICROSTRUCTURE; NITROGEN; PERMITTIVITY; SEMICONDUCTING FILMS; SILICON; STOICHIOMETRY; SUBSTRATES; X RAY PHOTOELECTRON SPECTROSCOPY;

DEPTH PROFILES; N2 ANNEALING; TANTALUM PENTOXIDE;

TANTALUM COMPOUNDS;

EID: 1342329661     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2003.09.040     Document Type: Article

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