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Volumn 420-421, Issue , 2002, Pages 117-121

Spectroscopic ellipsometry study on the structure of Ta2O5/SiOxNy/Si gate dielectric stacks

Author keywords

Ellipsometry; Silicon oxynitride; Tantalum oxide; X Ray photoelectron spectroscopy

Indexed keywords

COMPOSITION; DEPOSITION; DIELECTRIC DEVICES; ELLIPSOMETRY; GATES (TRANSISTOR); MOSFET DEVICES; REFRACTIVE INDEX; STOICHIOMETRY; TANTALUM COMPOUNDS; X RAY PHOTOELECTRON SPECTROSCOPY;

EID: 0037011146     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(02)00657-0     Document Type: Conference Paper
Times cited : (8)

References (15)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.