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Volumn 420-421, Issue , 2002, Pages 117-121
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Spectroscopic ellipsometry study on the structure of Ta2O5/SiOxNy/Si gate dielectric stacks
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Author keywords
Ellipsometry; Silicon oxynitride; Tantalum oxide; X Ray photoelectron spectroscopy
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Indexed keywords
COMPOSITION;
DEPOSITION;
DIELECTRIC DEVICES;
ELLIPSOMETRY;
GATES (TRANSISTOR);
MOSFET DEVICES;
REFRACTIVE INDEX;
STOICHIOMETRY;
TANTALUM COMPOUNDS;
X RAY PHOTOELECTRON SPECTROSCOPY;
EFFECTIVE MEDIUM APPROXIMATION (EMA);
THIN FILMS;
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EID: 0037011146
PISSN: 00406090
EISSN: None
Source Type: Journal
DOI: 10.1016/S0040-6090(02)00657-0 Document Type: Conference Paper |
Times cited : (8)
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References (15)
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