Investigation of the interlayer characteristics of Ta 2O 5 thin films deposited on bare, N 2O, and NH 3 plasma nitridated Si substrates

Journal of Applied Physics

Volumn 91, Issue 10 I, 2002, Pages 6428-6434

  Lai, Yi Sheng ^a   Chen, Kuan Jen ^a   Chen, J S ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

C-V MEASUREMENT; CAPACITANCE VOLTAGE MEASUREMENTS; DENSITY OF INTERFACE STATE; FIXED CHARGES; HIGH DENSITY; LOW TEMPERATURES; NITRIDATION PROCESS; NITRIDED; NITRIDED LAYER; PLASMA NITRIDATION; SI SUBSTRATES; SI SURFACES; SURFACE AND INTERFACES; SURFACE OXIDE; THERMODYNAMIC INSTABILITY; TRAPPING SITES;

ATOMIC FORCE MICROSCOPY; MOS CAPACITORS; NITRIDATION; NITROGEN PLASMA; PHOTOELECTRONS; SECONDARY ION MASS SPECTROMETRY; SILICON; SUBSTRATES; TANTALUM OXIDES; TRANSMISSION ELECTRON MICROSCOPY; X RAY PHOTOELECTRON SPECTROSCOPY;

PLASMA APPLICATIONS;

EID: 0037094673     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1471926     Document Type: Article

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