Defect generation in high κ gate dielectric stacks under electrical stress: The impact of hydrogen

Journal of Physics Condensed Matter

Volumn 17, Issue 21, 2005, Pages

  Houssa, M ^a   Pourtois, G ^a   Heyns, M M ^a   Stesmans, A ^b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHEMICAL BONDS; DATA ACQUISITION; DEFECTS; HAFNIUM COMPOUNDS; HYDROGEN; MOSFET DEVICES;

ELECTRICAL STRESS; GATE DIELECTRIC STACKS; NEGATIVE BIAS TEMPERATURE INSTABILITIES (NBTI); POSITIVE CHARGE DENSITY;

DIELECTRIC MATERIALS;

EID: 18744412621     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/17/21/004     Document Type: Article

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