Gate induced floating body effects in TiN/SiON and TiN/HfO2 gate stack triple gate SOI nFinFETs

Solid-State Electronics

Volumn 51, Issue 9, 2007, Pages 1201-1210

  Rafi J M ^a   Simoen, E ^b   Mercha, A ^b   Collaert, N ^b   Hayama, K ^c   Campabadal, F ^a   Claeys, C ^b,d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Drain current transients; FinFETs; Floating body effect (FBE); Gate induced floating body effect (GIFBE); Generation recombination lifetimes; High k; Metal gate; Silicon on insulator (SOI)

Indexed keywords

BAND STRUCTURE; ELECTRIC CURRENTS; ELECTRON TUNNELING; SILICON ON INSULATOR TECHNOLOGY; TRANSCONDUCTANCE;

DRAIN CURRENT TRANSIENTS; FLOATING BODY EFFECT (FBE); GATE INDUCED FLOATING BODY EFFECT (GIFBE); METAL GATES; RECOMBINATION LIFETIMES;

GATE DIELECTRICS;

EID: 34548526681     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2007.07.012     Document Type: Article

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