Extraction of the gate oxide thickness of N- and P-channel MOSFETs below 20 angstrom from the substrate current resulting from valence-band electron tunneling

Technical Digest - International Electron Devices Meeting

Volumn , Issue , 1999, Pages 815-818

  Shanware, A ^a   Shiely, J P ^a   Massoud, H Z ^a   Vogel, E ^a   Henson, K ^a   Srivastava, A ^a   Osburn, C ^a   Hauser, J R ^a   Wortman, J J ^a  

^a DUKE UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; CAPACITANCE; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRON TUNNELING; MATHEMATICAL MODELS; OXIDES; QUANTUM THEORY; SUBSTRATES;

CAPACITANCE VOLTAGE CHARACTERISTICS; DIRECT TUNNELING; GATE OXIDE THICKNESS; ULTRATHIN OXIDES; VALENCE BAND ELECTRON TUNNELING;

MOSFET DEVICES;

EID: 0033324935     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (15)