Using direct-tunneling mechanism to suppress hysteresis effect in floating-body partially depleted SOI devices

IEEE Electron Device Letters

Volumn 25, Issue 5, 2004, Pages 331-333

  Chen, Shiao Shien ^a   Shiang, Huang Lu ^a   Tang, Tien Hao ^a  

^a UNITED MICROELECTRONICS CORPORATION   (Taiwan)

Author keywords

Direct tunneling; Floating body; Hysteresis; Partially depleted silicon on insulator (PD SOI)

Indexed keywords

ELECTRIC POTENTIAL; ELECTRON TUNNELING; GATES (TRANSISTOR); HYSTERESIS; SILICON ON INSULATOR TECHNOLOGY;

DIRECT TUNNELING; FLOATING-BODY; PARTIALLY DEPLETED SILICON ON INSULATOR;

MOSFET DEVICES;

EID: 2442591792     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2004.827284     Document Type: Letter

References (7)

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