SCOPUS 정보 검색 플랫폼

Volumn 153, Issue 5, 2006, Pages

Estimating temperature dependence of generation lifetime extracted from drain current transients

c IMEC (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

DEVICE PARAMETERS; GATE OXIDE THICKNESS; GENERATION LIFETIME DETERMINATION; TWO-DIMENSIONAL NUMERICAL SIMULATION;

ELECTRIC CURRENTS; ELECTRIC INSULATORS; MOS DEVICES; SEMICONDUCTOR MATERIALS; SENSITIVITY ANALYSIS; SILICON;

THERMAL EFFECTS;

EID: 33645698280 PISSN: 00134651 EISSN: None Source Type: Journal
DOI: 10.1149/1.2186034 Document Type: Article

Times cited : (11)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.