Impact of radiation-induced back-channel leakage and back-gate bias on drain current transients of thin-gate-oxide partially depleted silicon-on-insulator n-channel metal-oxide-semiconductor field-effect transistors

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 43, Issue 12, 2004, Pages 7984-7992

  Rafí, Joan Marc ^a,c   Mercha, Abdelkarim ^a   Simoen, Eddy ^a   Hayama, Kiyoteru ^a   Claeys, Cor ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

^c INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

Author keywords

Buried oxide; Drain current transients; Floating body effects; Generation lifetime; Proton irradiation; Radiation effects; Recombination lifetime; Silicon on insulator (SOI) MOSFETs

Indexed keywords

CARRIER CONCENTRATION; CURRENT VOLTAGE CHARACTERISTICS; DATA ACQUISITION; LEAKAGE CURRENTS; PROTON IRRADIATION; RADIATION EFFECTS; SILICON ON INSULATOR TECHNOLOGY;

BURIED OXIDE; DRAIN CURRENT TRANSIENTS; FLOATING-BODY EFFECTS (FBE); FULLY DEPLETED (FD); GENERATION LIFETIME; PARTIALLY DEPLETED (PD); RECOMBINATION LIFETIME;

MOSFET DEVICES;

EID: 13644275257     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/JJAP.43.7984     Document Type: Article

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