Total dose radiation effects in partially-depleted SOI transistors with ultrathin gate oxide

Proceedings - IEEE International SOI Conference

Volumn , Issue , 2004, Pages 30-31

  Jun, B ^a   Fouillat, M ^b   Schrimpf, R D ^a   Fleetwood, D M ^a   Cristoloveanu, S ^c  

^a VANDERBILT UNIVERSITY   (United States)

^b Dept of the IUT Mesures Physiques ^*  (France)

^c IMEP LAHC   (France)

Author keywords

[No Author keywords available]

Indexed keywords

DOSE RADIATION EFFECTS; GATE-INDUCED FLOATING BODY EFFECT (GIFBE); ISOCHRONAL ANNEALING; ULTRATHIN GATE OXIDE;

ANNEALING; CMOS INTEGRATED CIRCUITS; IRRADIATION; LEAKAGE CURRENTS; MOSFET DEVICES; SILICA; THERMAL EFFECTS; THRESHOLD VOLTAGE; TRANSISTORS;

SILICON ON INSULATOR TECHNOLOGY;

EID: 16244417160     PISSN: 1078621X     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (4)

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2. A. Mercha, J.M. Rafi, E. Simeon, E. Augendre and C. Clacy, IEEE Trans. Electron Dev., Vol. 50, No. 7, pp. 1675-1682, July 2003.
3. T. Ouisse, S. Cristoloveanu, and G. Borel, IEEE Electron Device Letters, Vol. 12, No. 6, pp. 312-314, June 1991.
4. T. R. Oldham, F. B. McLean, H. E. Boesch, Jr., and J. M. McGarrity, Semiconductor Science Technology, Vol. 4. pp. 986-999, 1989.