Impact of gate tunneling floating-body charging on drain current transients of 0.10 μm-CMOS partially depleted SOI MOSFETs

Solid-State Electronics

Volumn 48, Issue 7, 2004, Pages 1211-1221

  Rafi J M ^a,b   Mercha, A ^a   Simoen, E ^a   Claeys, C ^a,c  

^a IMEC   (Belgium)

^b INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^c UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Drain current transients; Floating body effects; Generation lifetime; Recombination lifetime; Silicon on insulator (SOI) MOSFETs

Indexed keywords

CHARGE CARRIERS; ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; ELECTRIC SPACE CHARGE; ELECTRON TUNNELING; GATES (TRANSISTOR); MOSFET DEVICES;

DRAIN CURRENT TRANSIENTS; FLOATING BODY EFFECTS; GENERATION LIFETIME; RECOMBINATION LIFETIME; SILICON ON INSULATOR (SOI) MOSFETS;

CMOS INTEGRATED CIRCUITS;

EID: 1842832725     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2004.01.003     Document Type: Article

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