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IEEE Electron Device Letters

Volumn 23, Issue 1, 2002, Pages 55-57

Reduced floating body effects in narrow channel SOI MOSFETs

(6) Pretet, J b,c Subba, N d Ioannou, Dimitris a,b,d Cristoloveanu, Sorin a,b Maszara, W e Raynaud, C f

a IEEE

b CNRS (France)

c STMICROELECTRONICS (France)

d GEORGE MASON UNIVERSITY (United States)

e ADVANCED MICRO DEVICES (United States)

f CEA LETI (France)

Author keywords

Isolation technology; MOSFETs; Semiconductor device measurements; Silicon on insulator technology

Indexed keywords

CHARGE CARRIERS; ELECTRIC BREAKDOWN; SEMICONDUCTOR DOPING; SILICON ON INSULATOR TECHNOLOGY; STRESSES;

FLOATING BODY EFFECTS;

MOSFET DEVICES;

EID: 0036163467 PISSN: 07413106 EISSN: None Source Type: Journal
DOI: 10.1109/55.974811 Document Type: Article

Times cited : (18)

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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.