Gate-induced floating body effect excess noise in partially depleted SOI MOSFETs

IEEE Electron Device Letters

Volumn 23, Issue 12, 2002, Pages 737-739

  Dieudonné, François ^a   Jomaah, Jalal ^a   Balestra, Francis ^a  

^a IMEP LAHC   (France)

Author keywords

Floating body effects (FBE); Gate tunneling; Low frequency noise (LFN); Partially depleted (PD); Silicon on insulator (SOI)

Indexed keywords

AMPLIFIERS (ELECTRONIC); ELECTRIC CURRENTS; ELECTRON TUNNELING; FAST FOURIER TRANSFORMS; GATES (TRANSISTOR); PERSONAL COMPUTERS; SEMICONDUCTING SILICON; SILICON ON INSULATOR TECHNOLOGY; SPURIOUS SIGNAL NOISE; TRANSCONDUCTANCE;

FLOATING BODY DEVICE; GATE TUNNELING; GATE-INDUCED FLOATING BODY EFFECT; LOW FREQUENCY NOISE; ULTRATHIN GATE OXIDE;

MOSFET DEVICES;

EID: 0037004954     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2002.805746     Document Type: Letter

References (7)

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