Coupling effects and channels separation in FinFETs

Solid-State Electronics

Volumn 48, Issue 4, 2004, Pages 535-542

  Dauge F ^a   Pretet, J ^a,c   Cristoloveanu, S ^a   Vandooren, A ^b   Mathew, L ^b   Jomaah, J ^a   Nguyen, B Y ^b  

^a IMEP LAHC   (France)

^b MOTOROLA INC   (United States)

^c STMICROELECTRONICS   (France)

Author keywords

FinFETs; Mobility; MOSFETs; SCEs; SOI

Indexed keywords

DOPING (ADDITIVES); ELECTRIC CURRENTS; ELECTRIC INSULATORS; ELECTRON MOBILITY; ETCHING; GATES (TRANSISTOR); INTERFACES (MATERIALS); POLYSILICON; SILICON WAFERS; TRANSCONDUCTANCE; TRANSMISSION ELECTRON MICROSCOPY;

SHORT CHANNEL EFFECTS (SCE); SILICON ON INSULATORS (SOI);

MOSFET DEVICES;

EID: 0442311975     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2003.09.033     Document Type: Conference Paper

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