Generation-recombination transient effects in partially depleted soi transistors: systematic experiments and simulations

IEEE Transactions on Electron Devices

Volumn 45, Issue 8, 1998, Pages 1678-1683

  Munteanu, Daniela ^a   Weiser, Douglas A ^b   Cristoloveanu, Sorin ^c   Faynot, Olivier ^d   Pelloie, Jean Luc ^e   Possum, Jerry G ^c  

^a IEEE   (United States)

^b Grenoble INP Phelma   (France)

^c University of Florida   (United States)

^d TEXAS INSTRUMENTS   (United States)

^e CEA LETI   (France)

Author keywords

Carrier lifetime; Generation recombination transient effects; Partially depleted mosfet; SOI

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; MATHEMATICAL MODELS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

CARRIER LIFETIME; FLOATING BODY EFFECTS;

INTEGRATED CIRCUIT LAYOUT;

EID: 0032139808     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.704363     Document Type: Article

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