A physical model for gate-to-body tunneling current and its effects on floating-body PD/SOI CMOS devices and circuits

Solid-State Electronics

Volumn 48, Issue 2, 2004, Pages 259-270

  Yang, Ji Woon ^a   Fossum, Jerry G ^a   Workman, Glenn O ^b   Huang, Cheng Liang ^b  

^a UNIVERSITY OF FLORIDA   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Energy quantization; Exchange energy; Floating body effects; Gate current; MOS direct tunneling; SOI MOSFETs

Indexed keywords

ELECTRIC CURRENTS; GATES (TRANSISTOR); MOSFET DEVICES; OPTIMIZATION;

GATE CURRENT;

CMOS INTEGRATED CIRCUITS;

EID: 0242303629     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(03)00272-7     Document Type: Article

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