SCOPUS 정보 검색 플랫폼

Electronics Letters

Volumn 33, Issue 20, 1997, Pages 1740-1742

Junction influence on drain current transients in partially-depleted SOI MOSFETs

(3) Ionescu, A M a Chovet, A a Chaudier, F a

a CNRS (France)

Author keywords

Carrier lifetime; MOSFET; Silicon on insulator

Indexed keywords

CHARGE CARRIERS; COMPUTER SIMULATION; CURRENT VOLTAGE CHARACTERISTICS; ELECTRONS; SEMICONDUCTOR DEVICE MODELS; SEMICONDUCTOR JUNCTIONS; SILICON ON INSULATOR TECHNOLOGY;

CARRIER LIFETIME; ZERBST TYPE TRANSIENTS;

MOSFET DEVICES;

EID: 0031221293 PISSN: 00135194 EISSN: None Source Type: Journal
DOI: 10.1049/el:19971169 Document Type: Article

Times cited : (5)

References (9)

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2
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3
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4
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5
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- New carrier lifetime measurement method for fully depleted SOI MOSFETs
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6
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7
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- A new lifetime characterisation technique using drain current transients in SOI material
- IONESCU, A.M., CRISTOLOVEANU, S., MUNTEANU, D., ELEWA, T., and GRI, M.: 'A new lifetime characterisation technique using drain current transients in SOI material', Solid-State Electron., 1996, 39, pp. 1753-1755
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9
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.