Hot-carrier-induced degradation of drain current hysteresis and transients in thin gate oxide floating body partially depleted SOI nMOSFETs

Microelectronics Reliability

Volumn 46, Issue 9-11, 2006, Pages 1657-1663

  Rafi J M ^a   Simoen, E ^b   Hayama, K ^c   Mercha, A ^b   Campabadal, F ^a   Ohyama, H ^c   Claeys, C ^b,d  

^a INSTITUTO DE MICROELECTRÓNICA DE BARCELONA   (Spain)

^b IMEC   (Belgium)

^c KUMAMOTO NATIONAL COLLEGE OF TECHNOLOGY   (Japan)

^d UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CHARACTERIZATION; DEGRADATION; HYSTERESIS; MOSFET DEVICES; SILICON ON INSULATOR TECHNOLOGY; TRANSIENTS;

DRAIN CURRENT; FLOATING BODY EFFECTS (FBE); THERMAL ANNEALING; THIN GATE OXIDE;

GATES (TRANSISTOR);

EID: 33747787668     PISSN: 00262714     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.microrel.2006.07.037     Document Type: Article

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