Full/partial depletion effects in FinFETs

Electronics Letters

Volumn 41, Issue 8, 2005, Pages 504-506

  Xiong, W ^a   Rinn Cleavelin, C ^a   Wise, R ^a   Yu, S ^a   Pas, M ^a   Zaman, R J ^b   Gostkowski, M ^b   Matthews, K ^b   Maleville, C ^c   Patruno, P ^c   King, T J ^d   Colinge, J P ^e  

^a TEXAS INSTRUMENTS   (United States)

^b ATDF Inc   (United States)

^c PARC TECHNOLOGIQUE DES FONTAINES   (France)

^d UNIVERSITY OF CALIFORNIA   (United States)

^e University of California   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; LITHOGRAPHY; METALLIZING; POLYSILICON; REACTIVE ION ETCHING; SEMICONDUCTING FILMS; SILICON ON INSULATOR TECHNOLOGY; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CROSS-SECTION; FINFET; FLOATING-BODY EFFECTS; HOLE CURRENT;

MOSFET DEVICES;

EID: 18144376356     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20050281     Document Type: Article

References (2)

1. Cassé, M., Pretet, J., Cristoloveanu, S., Poiroux, T., Fenouillet-Beranger, F., Fruleux, F., Raynaud, C., and Reimbold, G.: 'Gate-induced floating-body effect in fully depleted SOI MOSFETs with tunneling gate oxide and back-gate biasing', Solid-State Electron., 2000, 48, (7), pp. 1243-1247
2. Shino, T., Higashi, T., Kusunocki, N., Fujita, K., Ohshawa, T., Aoki, N., Tanimoto, H., Minami, Y., Yaniada, T., Morikado, M., Nakajima, H., Inoh, K., Hamamoto, T., and Nitayama, A.: 'Fully depleted FBC (floating body cell) with enlarged signal window and excellent logic process compatibility', Tech. Dig. IEDM, 2004, pp. 281-284