The Use of Quantum Potentials for Confinement and Tunnelling in Semiconductor Devices

Journal of Computational Electronics

Volumn 1, Issue 4, 2002, Pages 503-513

  Asenov, A ^a   Watling, J R ^a   Brown, A R ^a   Ferry, D K ^b  

^a UNIVERSITY OF GLASGOW   (United Kingdom)

^b Arizona State University   (United States)

Author keywords

density gradient; effective potential; intrinsic fluctuations; MOSFETs; numerical simulations; quantum corrections; quantum potential

Indexed keywords

COMPUTATIONAL EFFICIENCY; COMPUTER SIMULATION; QUANTUM THEORY; SILICA;

DENSITY GRADIENTS; EFFECTIVE POTENTIALS; INTRINSIC FLUCTUATIONS; MOSFETS; QUANTUM CORRECTION; QUANTUM POTENTIALS;

MOSFET DEVICES;

EID: 3142706175     PISSN: 15698025     EISSN: 15728137     Source Type: Journal    
DOI: 10.1023/A:1022905508032     Document Type: Article

References (33)

1. Ancona M.G. 2000. Equations of state for silicon inversion layers. IEEE Transactions on Electron Devices 47: 1449–1456.
2. Ancona M. 2001. Private Communication.
3. Ancona M.G. and Iafrate G.J. 1989. Quantum correction to the equation of state of an electron gas in a semiconductor. Physical Review B 39: 9536–9540.
4. Asenov A. 1998. Random dopant induced threshold voltage lowering and fluctuations in sub 0.1mMOSFETs: A3D‘atomistic’ simulation study. IEEE Transactions on Electron Devices 45: 2505–2513.
5. Asenov A., Slavcheva G., Brown A.R., Davies J.H., and Saini S. 1999. Quantum mechanical enhancement of the random dopant induced threshold voltage fluctuations and lowering in sub 0.1 µm MOSFETs. IEDM Tech. Digest 535–538.
6. Asenov A., Slavcheva G., Brown A.R., Davies J.H., and Saini S. 2001. Increase in the random dopant induced threshold fluctuations and lowering in sub-100 nm MOSFETs due to quantum effects: A 3-D density gradient simulation study. IEEE Transactions on Electron Devices 48: 722–729.
7. Barker J.R. 1992. Fundamental aspects of quantum transport theory. In: Handbook on Semiconductors, Vol 1: Basic Properties of Semiconductors. North-Holland, Amsterdam.
8. Bowen R.C., Klimeck G., Lake R., Frensley W.R., and Moise T. 1997. Quantitative resonant tunneling diode simulation. Journal of Applied Physics 81: 3207–3213.
9. Carruthers P. and Zachariasen F. 1983. Quantum collision theory with phase-space distributions. Review of Modern Physics 55: 245–284.
10. Chapman S. and Cowling T.G. 1952. The mathematical theory of non-uniform gases. 2nd edn. Cambridge University Press, Cambridge, UK.
11. Ferry D.K. 2000. The onset of quantization in ultra-submicron semiconductor devices. Superlattices and Microstructures 27: 61– 66.
12. Ferry D.K., Akis R., and Vasileska D. 2000. Quantum effects in MOSFETs: Use of an effective potential in 3D Monte Carlo simulation of ultra-short channel devices. IEDM Tech. Digest 287–290.
13. Fetter A.L. and Walecka J.D. 1971. Quantum theory of many-particle systems. McGraw-Hill, New York.
14. Hisamoto D. 2001. FD/DG-SOI MOSFETS—A viable approach to overcoming the device scaling limit. IEDM Tech. Digest 429–432.
15. Iafrate G.J., Grubin H.L., and Ferry D.K. 1982. The Wigner distribution function. Physics Letters 87A: 145–148.
16. Jallepalli S., Bude J., Shih W.K., Pinto M.R., Maziar C.M., and Tasch A.F., Jr. 1997. Electron and hole quantization and their impact on deep submicron p-and n-MOSFET characteristics. IEEE Trans. Electron Devices 44: 297–303.
17. Kawaura H., Sakamoto T., and Baba T. 2000. Observation of sourceto-drain direct tunnelling current in 8 nm gate electrically variable shallow junction metal-oxide-semiconductor field-effect transistors. Applied Physics Letters 76: 3810–3812.
18. Kawaura H., Sakamoto T., Baba T., Ochiai Y., Fujita J., and Sone J. 2000. Transistor characteristics of 14 nm gate-length EJMOSFETs. IEEE Transactions on Electron Devices 47: 856–860.
19. Lundstrom M. 2001. Private Communication.
20. Perrot F. 1979. Gradient correction to the statistical electronic free energy at nonzero termperatures: Application to equation of state of an electron gas in a semiconductor. Physical Review B A20: 586.
21. Rafferty C.S., Biegel B., Yu Z., Ancona M.G., Bude J., and Dutton R.W. 1998. Multi-dimensional quantum effects simulation using a density gradient model and script-level programming technique. In: SISPAD'98, De Meyer and Biesemans (Eds.), pp. 137–140.
22. Ramey S.M. and Ferry D.K. 2002. 3D Monte Carlo modeling of thin SOI MOSFETs including the effective potential and random dopant distribution. Journal of Computational Electronics 1: 267– 271.
23. Ren Z., Venugopal R., Datta S., Lundstrom M., Jovanovic D., and Fossum J. 2001. Examination of design and manufacturing issues in a 10 nm double gate MOSFET using non-equilibrium Green's function simulation. IEDM Tech. Digest 107–110.
24. Snowden C.M. 1989. Semiconductor device modelling. Springer-Verlag, Wien.
25. Stern F. 1970. Iteration methods for calculating self-consistent fields in semiconductor inversion layers. Journal of Computational Physics 6: 56–67.
26. Svizhenko A., Anantram M.P., Govindan T.R., Biegel B., and Venugopal R. 2002. Two-dimensional quantum mechanical modeling of nanotransistors. Journal of Applied Physics 91: 2343– 2353.
27. Taur Y. and Ning T.H. 1998. Fundamentals of modern VLSI devices. Cambridge University Press, Cambridge, UK.
28. Thompson S., Alavi M., Argavani R., Brand A., Bigwood R., Brandenburg J., Crew B., Dubin V., Hussein M., Jacob P., Kenyon C., Lee E., Mcintyre M., Ma Z., Moon P., Nguyen P., Prince M., Schweinfurth R., Shvakumar S., Smith P., Stettler M., Tyagi S., Wei M., Xu J., Yang S., and Bohr M. 2001. An enhanced 130 nm generation logic technology featuring 60 nm transistors optimised for high performance and low power at 0.7–1.4 V. IEDM Tech. Digest 257–261.
29. Tsuchiya H., Fischer B., and Hess K. 2000. A full-band Monte Carlo model for silicon nanoscale devices with a quantum mechanical correction of the potential. IEDM Tech. Digest 283–286.
30. Tsuchiya H. and Miyoshi T. 2000. Quantum mechanical Monte Carlo approach to electron transport at heterointerface. Superlattices and Microstructures 27: 529–532.
31. Tsuchiya H., Winstead B., and Ravaioli U. 2001. Quantum potential approaches for nano-scale device simulation. VLSI Design 13: 335–340.
32. Watling J.R., Brown A.R., and Asenov A. 2002. Can the density gradient approach describe the source-drain tunnelling in decanano double-gate MOSFETs? Journal of Computational Electronics 1: 289–293.
33. Watling J.R., Brown A.R., Asenov A., and Ferry D.K. 2001. Quantum corrections in 3-D drift diffusion simulations of decanano MOSFETs using an effective potential. In: SISPAD'01, Tsoukalas D. and Tsamis C. (Eds.), pp. 82–85.