New developments in Gallium Nitride and the impact on power electronics

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2005, Issue , 2005, Pages 15-26

  Khan, M A ^a   Simin, G ^a   Pytel, S G ^a   Monti, A ^a   Santi, E ^a   Hudgins, J L ^b  

^a The Department of Mechanical Engineering   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC AREA; SATURATION VELOCITY; ULTRAVIOLET EMITTERS;

ELECTRIC BREAKDOWN; ENERGY CONVERSION; ENERGY GAP; GALLIUM NITRIDE; GATE DIELECTRICS; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; ULTRAVIOLET DETECTORS;

POWER ELECTRONICS;

EID: 33847702858     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2005.1581596     Document Type: Conference Paper

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