New developments in Gallium Nitride and the impact on power electronics

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 2005, Issue , 2005, Pages 15-26

  Khan, M A ^a   Simin, G ^a   Pytel, S G ^a   Monti, A ^a   Santi, E ^a   Hudgins, J L ^b  

^a University of South Carolina   (United States)

^b UNIVERSITY OF NEBRASKA LINCOLN   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC AREA; SATURATION VELOCITY; ULTRAVIOLET EMITTERS;

ELECTRIC BREAKDOWN; ENERGY CONVERSION; ENERGY GAP; GALLIUM NITRIDE; GATE DIELECTRICS; LIGHT EMITTING DIODES; SEMICONDUCTOR MATERIALS; ULTRAVIOLET DETECTORS;

POWER ELECTRONICS;

EID: 33847702858     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PESC.2005.1581596     Document Type: Conference Paper

References (77)

1. M. A Khan, J. M. Van Hove J. N. Kuznia and D. T. Olsen, High electron mobility GaN-AlGaN heterostructures grown by LPMOCVD, Appl. Phys. Lett. 58, 2408 (1991) and also: M.A. Khan, J. N. Kuznia, J. M. Van Hove N. Pan and N. Carter, Observation of a two-dimensional electron gas in low pressure MOCVD deposited GaN/AlGaN heterojunctions, Appl. Phys. Lett. 60, 3027 (1992)
2. S. Rumyantsev, M. Shur and M. Levinshtein, Material Properties of Nitrides. Summary, Int. Journ. of High Speed Electronics and systems, V. 14, N1, 1-19 (2004)
3. "HB-LED market reaches $1.8 billion," Compound Semicond., vol. 9, no. 2, pp. 17, 2003.
4. "High-brightness LEDs 2003 - Market review and forecast," Strategies Unlimited, June 2003.
5. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger and J. Hilsenbeck, Two-dimensional electron gases induced by spontaneous and piezoelectric polarization charges in N- and Ga-face AlGaN/GaN heterostructures, Journ. Appl. Phys. 85, 3222-3233 (1999)
6. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, Hans-Conrad zur Loye, G. Tamulaitis, A. Zukauskas, David J. Smith, D. Chandrasekhar, and R. Bicknell-Tassius, Lattice and Energy Band Engineering in AlInGaN/GaN Heterostructures , Appl. Phys. Lett 76 (9) pp. 1161-1163 (2000)
7. J. W. Lee and I. Adesida, "Gallium Nitride for Electronics" in: Encyclopedia of RF and Microwave Engineering, John Wiley & Sons, Inc., 2005 ISBN: 0-471-27053-9
8. T. Nishida, H. Saito, N. Kobayashi, Appl. Phys. Lett. 78, 3927-3928 (2001).
9. T. Nishida, H. Saito, N. Kobayashi, Appl. Phys. Lett. 79, 711-712 (2001).
10. W. Sun, V. Adivarahan, M. Shatalov, Y. Lee, S. Wu, J. Yang, J. Zhang, and M. A. Khan: Jpn. J. Appl. Phys. 43 (2004) L 1419.
11. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, R. Gaska, M. Shatalov, J. Yang, and M. A. Khan, Appl. Phys. Lett. 85 5532 (2004).
12. J. P. Zhang, H. M. Wang, M. E. Gaevski, C. Q. Chen, Q. Fareed, J. W. Yang, G. Simin, M. Asif Khan, Appl. Phys. Lett. 80, 3542-3544 (2002).
13. H. M. Wang, J. P. Zhang, C. Q. Chen, Q. Fareed, J. W. Yang, M. Asif Khan, Appl. Phys. Lett. 81, 604-606 (2002).
14. J. P. Zhang, M. Asif Khan, W. H. Sun, H. M. Wang, C. Q. Chen, Q. Fareed, E. Kuokstis, J. W. Yang, Appl. Phys. Lett. 81, 4392-4394 (2002).
15. W. Sun, V. Adivarahan, M. Shatalov, Y. Lee, S. Wu, J. Yang, J. Zhang, and M. A. Khan: Jpn. J. Appl. Phys. 43 (2004) L 1419.
16. J. P. Zhang, X. Hu, Y. Bilenko, J. Deng, A. Lunev, R. Gaska, M. Shatalov, J. Yang, and M. A. Khan, Appl. Phys. Lett. 85 5532 (2004).
17. M. A. Khan, J. N. Kuznia, D. T. Olson, J. M. Van Hove, M. Blasingame, and L. F. Reitz: Appl. Phys. Lett. 60 (1992) 2917.
18. M. P. Ulmer, M. Razeghi, and E. Bigan: Proc. SPIE 2397 (1995) 210.
19. P. Schreiber, T. Dang, G. Smith, T. Pickenpaugh, P. Gehred, and C.Litton, Proc. SPIE, 3629 (1999) 230.
20. G. A. Shaw and M. Nischan: Proc. SPIE 4396 (2001) 31.
21. M. S. Shur and M. A. Khan: MRS Bull. 22 (1997) 44.
22. M. A. Khan, J. Kuznia, D. T. Olson, M. Blasingame, and A. R. Bhattarai: Appl. Phys. Lett. 63 (1993) 2455.
23. Q. Chen, J. W. Yang, A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov, and H. Temkin: Appl. Phys. Lett. 70 (1997) 2277.
24. A. Osinsky, S. Gangopadhyay, B. W. Lim, M. Z. Anwar, M. A. Khan, D. V. Kuksenkov, and H. Temkin: Appl. Phys. Lett. 72 (1998) 742.
25. B. W. Lim, S. Gangopadhyay, J. W. Yang, A. Osinsky, Q. Chen, M. Z. Anwar, and M. A. Khan: Electron. Lett. 33 (1997) 633.
26. A. Teke, S. Dogan, F. Yun, M. A. Reshchikov, H. Le, X. Q. Liu, H. Morkoc, S. S. Zhang, W. B. Wang, and R. R. Alfano: Solid-State Electron. 47 (2003) 1401.
27. M. A. Khan, Q. Chen, C. J. Sun, M. S. Shur, M. F. Macmillan, R. P. Devaty, and J. Choyke: Proc. SPIE 2397 (1995) 283.
28. X. Zhang, P. Kung, D. Walker, J. Piotrowski, A. Rogalski, A. Saxler, and M. Razeghi: Appl. Phys. Lett. 67 (1995) 2028.
29. Q. Chen, M. A. Khan, C. G. Sun, and J. W. Yang,: Electron. Lett. 31 (1995) 1781.
30. A. Osinsky, S. Gangopadhyay, R. Gaska, B. Williams, M. A. Khan, D. Kuksenkov, and H. Temkin: Appl. Phys. Lett. 71 (1997) 2334.
31. G. Y. Xu, A. Salvador, W. Kim, Z. Fan, C. Lu, H. Tang, H. Morkoc, G. Smith, M. Estes, B. Goldenberg, W. Yang, and S. Krishnankutty: Appl. Phys. Lett. 71 (1997) 13.
32. D. Walker, A. Saxler, P. Kung, X. Zhang, M. Hamilton, J. Diaz, and M. Razeghi: Appl. Phys. Lett. 72 (1998) 3303.
33. J. C. Carrano, T. Li, P. A. Grudowski, C. J. Eiting, D. Lambert, J. D. Schaub, R. D. Dupuis, J. C. Campbell: Electron. Lett. 34 (1998) 692.
34. G. B. Parish, S. Keller, P. Kozodoy, J. P. Ibbetson, H. Marchand, P. T. Fini, S. B. Fleischer, S. P. DenBaars, U. K. Mishra, and E. J. Tarsa: Appl. Phys. Lett. 75, (1999) 247.
35. D. Walker, V. Kumar, K. Mi, P. Sandvik, P. Kung, X. H. Zhang, and M. Razeghi: Appl. Phys. Lett. 76 (2000) 403.
36. S. C. Jain, M. Willander, J. Narayan, and R. Van Overstraeten: J. Appl. Phys. 87, (2000) 965.
37. E. J. Tarsa, P. Kozodoy, J. Ibbetson, B. P. Keller, G. Parish, and U. Mishra: Appl. Phys. Lett. 77 (2000) 316.
38. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi: J. Cryst. Growth 231 (2001) 366.
39. J. C. Campbell, C. J. Collins, M. M. Wong, U. Chowdhury, A. L. Beck, and R. D. Dupuis: Phys. Stat. Solidi (a) 188 (2001) 283.
40. K. A. McIntosh, R. J. Molnar, L. J. Mahoney, A. Lightfoot, M. W. Geis, K. M. Molvar, I. Melngailis, R. L. Aggarwal, W. D. Goodhue, S. S. Choi, D. L. Spears, and S. Verghese: Appl. Phys. Lett. 75 (1999) 3485.
41. J. C. Carrano, D. J. H. Lambert, C. J. Eiting, C.J. Collins, T. Li, S. Wang, B. Yang, A. L. Beck, R. D. Dupuis, and J. C. Campbell: Appl. Phys. Lett. 76 (2000) 924.
42. K. A. McIntosh, R. J. Molnar, L. J. Mahoney, K. M. Molvar, N. Efremow, Jr., and S. Verghese: Appl. Phys. Lett. 76 (2000) 3938.
43. E. Ozbay, N. Biyikli, I. Kimukin, T. Kartaloglu, T. Tut, and O. Aytür: IEEE J. of Sci. Topics in Quant. Electron. 10 (2004) 742.
44. B. Yang, B. Yang, K. Heng, T. Li, C. J. Collins, S. Wang, R. D. Dupuis, J. C. Campbell, M. J. Schurman, and I. T. Ferguson: IEEE J. Quant. Electron. 36 (2000) 1229.
45. P. Lamarre, A. Hairston, S. Tobin, K. K. Wong, M. F. Taylor, A. K. Sood, M. B. Reine, M. J. Schurman, I. T. Fergusson, R. Singh, and C. R. Eddy Jr.: Proc. Mat. Soc. Symp. 639 (2001) G10.0.1.
46. J. D. Brown, J. Boney, J. Matthews, P. Srinivasan, J. F. Schetzina, T. Nohava, W. Yang, S. Krishnankutty: MRS Internet J. Nitride Semicond. Res. 5 (2000) 6.
47. A. Hirano, C. Pernot, M. Iwaya , T. Detchprohm, H. Amano, and I. Akasaki: Phys. Stat. Sol. (a) 188, (2001) 293.
48. D. Ciplys, R. Gaska, M. S. Shur, R. Rimeika, J. Yang, and M. Asif Khan: Proc. SPIE 4453 (2001) 37.
49. D. Ciplys, R. Rimeika, M. S. Shur, S. Rumyantsev, R. Gaska, A. Sereika A., J. Yang and M. A. Khan: Appl. Phys. Lett. 80 (2002) 2020.
50. D. Ciplys, M. S. Shur, N. Pala, A. Sereika, R. Rimeika, R. Gaska, and Q. Fareed, Proc. IEEE Sensor Conference, Vienna (2004) (to be published).
51. M. Asif Khan, J. W. Yang, G. Simin, R. Gaska, M. S. Shur, A. Bykhovsky, Piezoelectric Doping in AlInGaN/GaN Heterostructures , Appl. Phys. Lett., 75 (18), pp. 2806-2808, 1999
52. T. Sheppard, W. L. Pribble, D.T.Emerson, Z. Ring, R. P. Smith, S. T. Allen, and J. W. Palmour, Device Research Conference Digest (2000) p. 37
53. N.X. Nguyen, M. Micovic, W.-S. Wong, P. Hashimoto, L.-M. McCray, P. Janke and C. Nguyen, Electron. Lett. 36 (2000) p. 468
54. Yi-Feng Wu; Kapolnek, D.; Ibbetson, J.P.; Parikh, P.; Keller, B.P.; Mishra, U.K., Very-high power density AlGaN/GaN HEMTs, IEEE Transactions on Electron Devices, V. 48, 586-590 (2001)
55. Wu Lu; Jinwei Yang; Khan, M.A.; Adesida, I. AlGaN/GaN HEMTs on SiC with over 100 GHz fT and low microwave noise, IEEE Transactions on Electron Devices, V. 48, 581-585 (2001)
56. M. Asif Khan, J. N. Kuznia, A. R. Bhattarai, and D. P. Olson, GaN/AlGaN Heterostructure Deposition by Low Pressure MOCVD for MISFET Devices, Material Research Society Proceedings, vol. 281, p.769 (1993)
57. M. Asif Khan, Michael S. Shur, Q. C. Chen, and J. N. Kuznia, Current-Voltage Characteristic Collapse in AlGaN/GaN Heterostructure Insulated Gate Field Effect Transistors at High Drain Bias, Electronics Letters, Vol. 30, No. 25, p. 2175, Dec. 8, 1994
58. S. C. Binari, L. B. Rowland, G. Kelner, W. Kruppa, H. B. Dietrich, K. Doverspike, D. K. Gaskill, "DC, Microwave, and High-Temperature Characteristics of GaN FET Structures," in Int. Sym. Compound Semiconductors, ed. H. Goronkin (IOP Publishing, Bristol, 1995), p.459
59. 3)/GaN Metal Oxide Semiconductor Field Effect Transistor, Appl. Phys. Lett. 73, 3893 (1998)
60. M. Asif Khan, X. Hu, G. Simin, A. Lunev, and J. Yang, R. Gaska and M. S. Shur, "AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistor", IEEE Electron Device Letters, vol. 21, pp.63-65 (2000)
61. M. Asif Khan, X. Hu, G. Simin, and J. Yang, R. Gaska and M.S. Shur, AlGaN/GaN Metal-Oxide-Semiconductor Heterostructure Field Effect Transistors on SiC Substrates, Appl. Phys. Lett. v. 77 pp 1339-1341 (2000)
62. A. Koudymov, H. Fatima, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, X. Hu, M. S. Shur, & R. Gaska Maximum Current in Nitride-Based Heterostructure Field Effect Transistors Appl. Phys. Lett, V. 80 pp. 3216-3218 (2002)
63. M. Micovic, N. X. Nguyen, P. Janke, W. S. Wong, P. Hashimoto, L. M. McCray, and C. Nguyen, "GaN/AlGaN high electron mobility transistors with fT of 110 GHz," Electron. Lett., vol. 36, pp. 358-359, Feb. 2000.
64. V. Kumar, W. Lu, R. Schwindt, A. Kuliev, G. Simin, J. Yang, M. A. Khan, and I. Adesida, "AlGaN/GaN HEMTs on SiC with fT of over 120 GHz," IEEE Electron Device Lett., vol. 23, No. 8, pp. 455-457, Aug. 2002.
65. Y. Ando, Y. Okamoto, H. Miyamoto, T. Nakayama, T. Inoue, and M. Kuzuhara, "10-W/mm AlGaN-GaN HFET With a Field Modulating Plate", IEEE EDL, V. 24, 289-291 (2003)
66. R. Thompson, T. Prunty, V. Kaper, and J. R. Shealy, "Performance of the AlGaN HEMT Structure With a Gate Extension", IEEE Trans. on ED, V. 51 292-295 (2004)
67. Y.-F. Wu, A. Saxler, M. Moore, R. P. Smith, S. Sheppard, P. M. Chavarkar, T. Wisleder, U. K. Mishra, and P. Parikh, "30-W/mm GaN HEMTs by Field Plate Optimization", IEEE EDL, V. 25, 117-119 (2004)
68. A. Koudymov et. al. Current collapse removal in field-plated AlGaN/GaN MOSHFETs. Submitted to IEEE EDL, April 2005
69. J.L. Hudgins, G. Simin, E. Santi and M.A. Khan, "An assessment of wide bandgap semiconductors for power devices," IEEE Trans. Power Electronics, Vol. 18, No. 3, pp. 907-914, May 2003
70. C. Park, P.L. Chapman, S.H. Rhee, S.J. X.HongZhang, P.T. Krein, K. Kim, GaN power switching device growth by plasma assisted molecular beam epitaxy, Conference Record of the 2002 Industry Applications Conference, 37th IAS Annual Meeting, Volume 1, 13-18 Oct. 2002, pp. 576-579 vol.1
71. S. Karmalkar, Jianyu Deng, M.S. Shur, IEEE Electron Device Letters, RESURF AlGaN/GaN HEMT for high voltage power switching, Volume 22, Issue 8, Aug. 2001 pp. 373-375
72. Naiqian Zhang, V. Mehrotra, S. Chandrasekaran, B. Moran, Likun Shen; U. Mishra, E. Etzkom, D. Clarke, Large area GaN HEMT power devices for power electronic applications: switching and temperature characteristics, 2003 IEEE 34th Annual Power Electronics Specialist Conference, PESC '03 Volume 1, 15-19 June 2003, pp. 233-237 vol.1
73. S. Yoshida, J. Li, T. Wada and H. Takehara. "High-power AlGaN/GaN HFET with lower on-state resistance and higher switching time for an inverter circuit, on IEE Proc. On Circuits Devices and Systems, vol. 151, N. 3, June 2004, pp. 207-210
74. W. Saito, M. Kuraguchi, Y. Takada, K. Tsuda, Ichiro Omura,and T. Ogura, High Breakdown Voltage Undoped AlGaN-GaN Power HEMT on Sapphire Substrate and Its Demonstration for DC-DC Converter Application IEEE Transactions On Electron Devices, VOL. 51, NO. 11, Nov. 2004, pp. 1913-1917
75. K. Matocha, T. P. Chow and R. J. Gutmann, High-Voltage Normally Off GaN MOSFETs on Sapphire Substrates, IEEE Transactions On Electron Devices, VOL. 52, NO. 1, Jan. 2005, pp. 6-9
76. S. G. Pytel, S. Lentijo, A. Koudymov, S. Rai, H. Fatima, V. Adivarahan, A. Chitnis, J. Yang, J.L. Hudgins, E. Santi, A. Monti, G. Simin, and M. Asif Khan, "AlgaN/GaN MOSHFET Integrated Circuit Power Converter", on Proc. of IEEE PESC 2004, Aachen (Germany), June 2004.
77. J.L. Hudgins, Gallium nitride - the other wide bandgap semiconductor, IEEE Power Electronics Society Newsletter, 2005