Large area GaN HEMT power devices for power electronic applications: Switching and temperature characteristics

PESC Record - IEEE Annual Power Electronics Specialists Conference

Volumn 1, Issue , 2003, Pages 233-237

  Zhang, Naiqian ^a   Mehrotra, Vivek ^b   Chandrasekaran, Sriram ^b   Moran, Brendan ^a   Shen, Likun ^a   Mishra, Umesh ^a   Etzkorn, Edward ^a   Clarke, David ^a  

^a University of California   (United States)

^b ROCKWELL SCIENTIFIC COMPANY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; ELECTRON MOBILITY; HETEROJUNCTIONS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; POWER ELECTRONICS; RAMAN SPECTROSCOPY; SWITCHING; TEMPERATURE DISTRIBUTION;

VOLTAGE BREAKDOWN;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0042158329     PISSN: 02759306     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. R. T. Fingers and C. Scott Rubertus, "Application of high temperature magnetic materials", IEEE Trans. Magnetics, vol. 36, pp. 3373-75, 2000 and references therein.
2. V. Mehrotra, J. Sun and S. Chandrasekaran, "Ultra compact dc-dc converters for the digital age", IEEE Industrial Electronics Society Conf. 2002, vol. 4, pp. 3232-3237.
3. N.-Q. Zhang, Ph.D. dissertation, University of California Santa Barbara (2002); N.-Q Zhang et al, "Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs", Electron Devices Meeting, 2001, IEDM Tech. Digest, pp. 25.5.1-25.5.4.
4. N.-Q. Zhang, Ph.D. dissertation, University of California Santa Barbara (2002); N.-Q Zhang et al, "Effects of surface traps on breakdown voltage and switching speed of GaN power switching HEMTs", Electron Devices Meeting, 2001, IEDM Tech. Digest, pp. 25.5.1 -25.5.4.
5. N.-Q. Zhang, B. Moran, S. P. DenBaars, U. K. Mishra, X. W. Wang, and T. P. Ma, "Kilovolts AlGaN/GaN HEMTs as switching devices," Phys. Stat. Sol. (a), vol. 188, pp. 213-7, 2001.
6. J. He, V. Mehrotra and M. C. Shaw, "Ultra-high resolution temperature measurement and thermal management of RF power devices using heat pipes," Intl. Symp. On Power Semiconductor Devices and ICs, ISPSD Proc. 1999, pp. 145-148.