Performance of the AlGaN HEMT structure with a gate extension

IEEE Transactions on Electron Devices

Volumn 51, Issue 2, 2004, Pages 292-295

  Thompson, Richard ^a   Prunty, Tom ^a   Kaper, Val ^a   Shealy, James R ^a  

^a Cornell University   (United States)

Author keywords

AlGaN; Field plate; HEMT; Microwave power; Passivation

Indexed keywords

ELECTRIC BREAKDOWN; ELECTRIC RESISTANCE; GALLIUM NITRIDE; GATES (TRANSISTOR); METALLORGANIC VAPOR PHASE EPITAXY; MICROWAVES; MIS DEVICES; NUCLEATION; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTOR DEVICE STRUCTURES; SILICON CARBIDE; SILICON NITRIDE;

FIELD PLATE; POWER ADDED EFFICIENCY; SEMICONDUCTING ALUMINUM GALLIUM NITRIDE;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 0442326799     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2003.822036     Document Type: Article

References (10)

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