High power demonstration at 10 GHz with GaN/AlGaN HEMT hybrid amplifiers

Annual Device Research Conference Digest

Volumn , Issue , 2000, Pages 37-38

  Sheppard, S T ^a   Pribble, W L ^a   Emerson, D T ^a   Ring, Z ^a   Smith, R P ^a   Allen, S T ^a   Palmour, J W ^a  

^a Arkansas Power Electronics International Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITORS; HIGH ELECTRON MOBILITY TRANSISTORS; METALLIZING; MICROWAVE DEVICES; REACTIVE ION ETCHING; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SILICON CARBIDE; SILICON WAFERS; TRANSCONDUCTANCE;

HIGH ELECTRON MOBILITY TRANSISTOR HYBRID AMPLIFIERS; MESA ETCHING; MICROWAVE TRANSISTORS;

POWER AMPLIFIERS;

EID: 0033657821     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Article

References (3)