Piezoelectric doping in AlInGaN/GaN heterostructures

Applied Physics Letters

Volumn 75, Issue 18, 1999, Pages 2806-2808

  Asif Khan, M ^a   Yang, J W ^a   Simin, G ^a   Gaska, R ^b   Shur, M S ^c   Bykhovski, A D ^c  

^a UNIVERSITY OF SOUTH CAROLINA   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0041375881     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.125156     Document Type: Article

References (10)

1. A. Bykhovski, B. Gelmont, and M. Shur, J. Appl. Phys. 74, 6734 (1993).
2. A. D. Bykhovski, V. V. Kaminski, M. S. Shur, Q. C. Chen, and M. A. Khan, Appl. Phys. Lett. 69, 3254 (1996).
3. M. S. Shur, A. D. Bykhovski, and R. Gaska, MRS Internet J. Nitride Semicond. Res. 4S1, G1.6 (1999).
4. R. Gaska, A. D. Bykhovski, M. S. Shur, J. Yang, and A. Osinsky, Appl. Phys. Lett. 71, 3673 (1997).
5. N. Maeda, T. Nishida, N. Kobayashi, and M. Tomizawa, Appl. Phys. Lett. 73, 1856 (1998).
6. P. M. Asbeck, E. T. Yu, S. S. Lau, G. J. Sullivan, J. Van Hove, and J. M. Redwing, Electron. Lett. 33, 1230 (1997).
7. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, 10024 (1997).
8. A. D. Bykhovski, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 73, 3577 (1998).
9. V. M. Fridkin, Ferroelectrics-Semiconductors (Nauka, Moscow, Russia, 1976), p. 90.
10. R. Gaska, M. S. Shur, A. Bykhovski, A. O. Orlov, and G. L. Snider, Appl. Phys. Lett. 74, 287 (1999).