AlGaN p-i-n photodiode arrays for solar-blind applications

Materials Research Society Symposium - Proceedings

Volumn 639, Issue , 2001, Pages

  Lamarre, P ^a   Hairston, A ^a   Tobin, S ^a   Wong, K K ^a   Taylor, M F ^a   Sood, A K ^a   Reine, M B ^a   Schurman, M J ^a   Ferguson, I T ^a   Singh, R ^a   Eddy Jr , C R ^a  

^a BAE SYSTEMS   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ARRAYS; HETEROJUNCTIONS; MATHEMATICAL MODELS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING ALUMINUM COMPOUNDS;

ALUMINUM GALLIUM NITRIDE; PHOTODIODE ARRAY; SOLAR BLIND APPLICATION;

PHOTODIODES;

EID: 0035558753     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (13)

1. Solar blind UV region and UV detector development objectives
2. 256×256 GaN ultraviolet imaging array
3. Development of 256×256 GaN ultraviolet imaging arrays
4. Fabrication and characterization of GaN/AlGaN ultraviolet-band heterojunction photodiodes
5. Back-illuminated GaN/AlGaN heterojunction photodiodes with high quantum efficiency and low noise
6. Visible-blind UV digital camera based on a 32 × 32 array of GaN/AlGaN p-i-n photodiodes
7. UV-specific (320-365 nm) digital camera based on a 128×128 focal plane array of GaN/AlGaN p-i-n photodiodes
8. Solar-blind AlGaN-based inverted heterostructure photodiodes
9. Back illuminated AlGaN solar-blind photodetectors
10. Solar-blind AlGaN heterostructure photodiodes
11. Investigation of n- and p-type doping of GaN during epitaxal growth in a mass production scale multiwafer-rotating-disk reactor
12. Etch processing of III-V nitrides
13. Origin of conductivity and low frequency noise in reverse-biased GaN p-n junction