AlxGa1-xN for solar-blind UV detectors

Journal of Crystal Growth

Volumn 231, Issue 3, 2001, Pages 366-370

  Sandvik, Peter ^a   Mi, Kan ^a   Shahedipour, Fatemeh ^a   McClintock, Ryan ^a   Yasan, Alireza ^a   Kung, Patrick ^a   Razeghi, Manijeh ^a  

^a Northwestern University   (United States)

Author keywords

A3. Chemical vapor deposition processes; A3. Low pressure metalorganic vapor phase epitaxy; A3. Selective epitaxy; B1. Nitrides; B1. Sapphire; B2. Semiconducting II V materials; B3. Heterojunction semiconductor devices

Indexed keywords

CHEMICAL VAPOR DEPOSITION; METALLORGANIC VAPOR PHASE EPITAXY; PHOTODIODES; QUANTUM EFFICIENCY; SAPPHIRE; SEMICONDUCTING FILMS; SOLAR RADIATION; SUBSTRATES; THIN FILMS; ULTRAVIOLET DETECTORS; VISIBILITY;

LOW PRESSURE METALLORGANIC VAPOR PHASE EPITAXY; SOLAR-BLIND ULTRAVIOLET PHOTODETECTORS;

SEMICONDUCTING ALUMINUM COMPOUNDS;

EID: 0035480386     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-0248(01)01467-1     Document Type: Conference Paper

References (9)