Maximum current in nitride-based heterostructure field-effect transistors

Applied Physics Letters

Volumn 80, Issue 17, 2002, Pages 3216-3218

  Koudymov, A ^a   Fatima, H ^a   Simin, G ^a   Yang, J ^a   Khan, M Asif ^a   Tarakji, A ^b   Hu, X ^b   Shur, M S ^b   Gaska, R ^b  

^a University of South Carolina   (United States)

^b SENSOR ELECTRONIC TECHNOLOGY INC   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ALGAN; CURRENT INCREASE; GATE LENGTH; GATE-LEAKAGE CURRENT; HETEROSTRUCTURE FIELD-EFFECT TRANSISTORS; METAL OXIDE SEMICONDUCTOR; MODELING RESULTS; MOS-HFETS; SERIES RESISTANCES; SUBMICRON GATE; VELOCITY SATURATION;

ELECTRIC RESISTANCE; GALLIUM NITRIDE; HETEROJUNCTIONS; HIGH ELECTRON MOBILITY TRANSISTORS; LEAKAGE CURRENTS; TRANSISTORS;

TWO DIMENSIONAL ELECTRON GAS;

EID: 79956049694     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1476054     Document Type: Article

References (8)

1. M. Asif Khan, X. Hu, G. Simin, and J. Yang, R. Gaska, and M. S. Shur, Appl. Phys. Lett. 77, 1339 (2000). apl APPLAB 0003-6951
2. X. Hu, A. Koudymov, G. Simin, J. Yang, M. Asif Khan, A. Tarakji, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2832 (2001). apl APPLAB 0003-6951
3. G. Simin, X. Hu, N. Ilinskaya, A. Kumar, A. Koudymov, J. Zhang, M. Asif Khan, R. Gaska, and M. S. Shur, Electron. Lett. 36, 2043 (2000). ell ELLEAK 0013-5194
4. M. S. Shur, GaAs Devices and Circuits. (Plenum, New York 1987).
5. M. A. Khan, J. W. Yang, G. Simin, H. zur Loye, R. Bicknell-Tassius, R. Gaska, M. S. Shur, G. Tamulaitis, and A. Žukauskas, Phys. Status Solidi A 176, 227 (1999). psa PSSABA 0031-8965
6. 1D Poisson/Schrodinger solver program developed by Dr. Gregory Snider, University of Notre Dame; internet address: http://www.nd.edu/∼gsnider/.
7. M. S. Shur and M. A. Khan, Proceedings of 23rd International Symposium on GaAs and Related Compounds, St. Petersburg, Russia, 22-28 September 1996 [Inst. Phys. Conf. Ser., No. 155, edited by M. S. Shur and R. Suris (IOP, London, 1997), Chap. 2, pp. 25-32].
8. G. Simin, A. Koudymov, A. Tarakji, X. Hu, J. Yang, M. A. Khan, M. S. Shur, and R. Gaska, Appl. Phys. Lett. 79, 2651 (2001). apl APPLAB 0003-6951