32 × 32 ultraviolet Al0.1Ga0.9N/GaN p-i-n photodetector array

IEEE Journal of Quantum Electronics

Volumn 36, Issue 11, 2000, Pages 1229-1231

  Yang, B ^a   Heng, K ^a   Li, T ^a   Collins, C J ^a   Wang, S ^a   Dupuis, R D ^a   Campbell, J C ^a   Schurman, M J ^b   Ferguson, I T ^b  

^a The University of Texas at Austin   (United States)

^b EMCORE CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

AVALANCHE DIODES; CURRENT DENSITY; ELECTRIC CURRENT DISTRIBUTION; PHOTOCURRENTS; PHOTODIODES; PHOTOMULTIPLIERS; QUANTUM EFFICIENCY; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR DEVICE MANUFACTURE; SEMICONDUCTOR DEVICE STRUCTURES; SEMICONDUCTOR GROWTH;

ALUMINUM GALLIUM NITRIDE PHOTODETECTOR; GALLIUM NITRIDE PHOTODETECTOR; PHOTOCURRENT DISTRIBUTION; ULTRAVIOLET PHOTODETECTOR;

ULTRAVIOLET DETECTORS;

EID: 0034314272     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/3.890260     Document Type: Article

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